醋酸铜辅助催化刻蚀制备金刚线切割多晶硅片绒面  

Diamond-wire-sawing Multi-crystalline Silicon Wafers Etched by Copper Acetate-assisted Catalysis

作　　者：李利凯 王美慧子 汪雷[1] 杨德仁[1] LI Likai;WANG Meihuizi;WANG Lei;YANG Deren(School of Materials Science and Engineering,State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]浙江大学材料科学与工程学院/硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2022年第1期6-10,共5页Journal of Materials Science and Engineering

基　　金：国家重点研发计划资助项目(2018YFB1500300);浙江省重点研发计划资助项目(2018C01034);国家自然科学基金资助项目(51532007,61721005)。

摘　　要：金刚线切割多晶硅片表面减反射结构难以制备的问题阻碍着多晶硅光伏的进步。银辅助的酸腐蚀是解决这一问题的较好方法,但银的消耗和废液处理等增加了成本。本研究提出了醋酸铜辅助催化刻蚀金刚线切割多晶硅片方案,考察了刻蚀反应温度和时间对硅片表面形貌的影响,确定了最优的反应温度和时间分别为25℃和5 min。在此条件下,所获得的多晶硅在300~1100 nm波段的平均反射率为15.1%。按照标准太阳电池制备工艺流片后,所获太阳电池的光电转换效率为19.4%。The difficulty in fabricating anti-reflection structures on the surface of diamond-wire-sawing(DWS)multi-crystalline silicon(mc-Si)wafers hinders the progress and development of the multi-crystalline silicon photovoltaic industry.The silver-assisted acid etching method is a good way to solve this problem,but the consumption of silver and the treatment of waste liquid increase the cost.A scheme of copper acetate-assisted catalytic etching of diamond wire-cut multi-crystalline wafers was proposed.The influences of the corrosion reaction temperature and reaction time on the surface morphology of the silicon wafer were systematically investigated.The optimal reaction temperature and reaction time are 25℃ and 5 min,respectively.Under this reaction conditions,the obtained multi-crystalline wafer has an average reflectivity of 15.1%in the band of 300-1100 nm.After taped out according to the standard solar cell preparation process,the photoelectric conversion efficiency of the obtained solar cell is 19.4%.

关 键 词：金刚线切割多晶硅片 减反射 金属辅助化学腐蚀法 

分 类 号：TN305.1[电子电信—物理电子学]