脉冲γ射线诱发N型金属氧化物场效应晶体管纵向寄生效应开启机制分析  

TCAD simulation analysis of vertical parasitic effect induced by pulsedγ-ray in NMOS from 180 nm to 40 nm technology nodes

作　　者：李俊霖[1] 李瑞宾[1] 丁李利[1] 陈伟[1] 刘岩[1] Li Jun-Lin;Li Rui-Bin;Ding Li-Li;Chen Wei;Liu Yan(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China)

机构地区：[1]西北核技术研究所,强脉冲辐射环境模拟与效应国家重点实验室,西安710024

出　　处：《物理学报》2022年第4期195-202,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11835006)资助的课题。

摘　　要：金属氧化物场效应晶体管作为大规模数字电路的基本单元,其内部的寄生效应一直以来被认为是影响集成电路在脉冲γ射线辐射环境中发生扰动、翻转以及闩锁的重要因素.为研究脉冲γ射线诱发N型金属氧化物场效应晶体管内部纵向寄生效应的开启机制,通过TCAD构建了40,90以及180 nm 3种不同工艺节点的NMOS晶体管进行瞬时电离辐射效应仿真,得到了纵向寄生三极管电流增益随工艺节点的变化趋势、纵向寄生三极管的开启条件及其对NMOS晶体管工作状态的影响.结果表明:1)脉冲γ射线在辐射瞬时诱发NMOS晶体管内部阱电势抬升是导致纵向寄生三极管开启的主要原因;2)当纵向寄生三极管导通时,NMOS晶体管内部会产生强烈的二次光电流影响晶体管的工作状态;3)NMOS晶体管内部纵向寄生三极管的电流增益随工艺节点的减小而减小.研究结果可为电子器件的瞬时电离辐射效应机理研究提供理论依据.The parasitic effect inside metal oxide field effect transistor regarded as the basic structure of large scale digital circuits,has long been considered as an important factor affecting the disturbance,upset and latchup of integrated circuits in pulsedγ-ray radiation environment.To investigate the turn-on mechanism of vertical parasitic effect in NMOSFET induced by pulsedγ-ray radiation,the 40 nm,90 nm and 180 nm NMOSFET device models are constructed by TCAD and the normal electrical characteristics are calibrated.The trend of vertical parasitic triode current gain,the turn-on conditions of vertical parasitic triode and their influence on working state of NMOSFET are obtained.The simulation results are shown below.1)The disturbance of well potential inside NMOSFET induced by pulsedγ-ray radiation is the main reason for the turn-on of vertical parasitic triode.2)When vertical parasitic triode is turn-on,the large secondary photocurrent will be generated inside NMOSFET which will affect the working state of the transistor.3)The current gain of vertical parasitic triode in NMOSFET decreases with the technology node decreasing.The results provide a theoretical basis for studying the transient ionizing radiation effects of electronic devices.

关 键 词：瞬时电离辐射效应 寄生效应 阱电势抬升 二次光电流 

分 类 号：TN386[电子电信—物理电子学]