PNN-PMN-PZT四元系压电陶瓷的制备与电学性能  

Study on Preparation and Electrical Properties of PNN-PMN-PZT Piezoelectric Ceramics

作　　者：张军 李向东 任奕菲[1] ZHANG Jun;LI Xiangdong;REN Yifei(Research Department of Medical Device,Dongguan HEC Research Institute,Dongguan 523867,China;School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]东莞东阳光研究院医疗器械研究所,广东东莞523867 [2]华中科技大学材料科学与工程学院,武汉430074

出　　处：《湖北民族大学学报（自然科学版）》2022年第1期19-25,共7页Journal of Hubei Minzu University:Natural Science Edition

基　　金：广东省基础与应用研究基金联合基金(181003)。

摘　　要：采用固相法制备(0.21+y-x)PNN-x PMN-(0.79-y)PZT,x=0.01、0.02、0.04、0.06、0.08、0.10,y=0.02、0.04、0.06、0.08、0.11、0.14、0.17、0.20压电陶瓷.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM),测试陶瓷的压电常数(d_(33))、相对介电常数(ε_(r))及介质损耗(tanδ),研究PNN、PMN组元含量对陶瓷样品物相调控、微观形貌、介电压电性能的影响.结果表明,在PNN-PMN-PZT体系中,PMN组元能够调控陶瓷晶型,PNN组元可以细化晶粒,还可以适当降低陶瓷烧结温度;当x=0.08、y=0时,烧结温度为1190℃时,d_(33)=656 pC/N、ε_(r)=1978、tanδ=0.0144,压电性能较PMN-PZT陶瓷有较大提升;当x=0.08、y=0.02,烧结温度为1070℃时,d_(33)=534 pC/N、ε_(r)=1472、tanδ=0.0173,压电性能与PMN-PZT相当,烧结温度降低近200℃,为内电极贱金属化,实现低温叠层共烧结提供参考.(0.21+y-x)PNN-x PMN-(0.79-y)PZT(x=0.01、0.02、0.04、0.06、0.08、0.10,y=0.02、0.04、0.06、0.08、0.11、0.14、0.17、0.20)piezoelectric ceramics were prepared by a conventional solid-state method.The phase composition and microstructure of ceramics were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM).The piezoelectric constant(d_(33)),dielectric constant(ε_(r)) and dielectric loss(tanδ)of ceramics were measured.The effects of PNN and PMN component content on phase control,microscopic morphology and dielectric properties of ceramics were studied.The results show that in PNN-PMN-PZT system,crystal form can be controlled by the PMN component,and crystal grains of ceramins can be refined by the PNN component,and the sintering temperature also can be appropriately reduced.When x=0.08,y=0,the sintering temperature is 1190℃,d_(33)=656 pC/N,ε_(r)=1978,tanδ=0.0144,and the piezoelectric properties are greatly improved than those of PMN-PZT ceramics;when x=0.08,y=0.02,the sintering temperature is 1070℃,d_(33)=534 pC/N,ε_(r)=1472,tanδ=0.0173,and the piezoelectric performance is equivalent to PMN-PZT,and the sintering temperature is reduced by nearly 200℃.The proposed method provides a reference for the base metalization of internal electrodes and the realization of low-temperature laminated co-sintering technology.

关 键 词：多元压电陶瓷 固相烧结 晶型调控 介电性能 压电性能 叠层共烧结 

分 类 号：TM282[一般工业技术—材料科学与工程] TQ174.1[电气工程—电工理论与新技术]