一种高辐射通量的UVC封装结构研究  

Study on a UVC Encapsulation Structure with High Radiation Flux

作　　者：杜元宝 张日光 张耀华 刘永福 DU Yuanbao;ZHANG Riguang;ZHANG Yaohua;LIU Yongfu(Ningbo Sunpu-opto Semiconductor LTD,Ningbo 315000,China;Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Science,Ningbo 315201,China)

机构地区：[1]宁波升谱光电股份有限公司,浙江宁波315000 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315201

出　　处：《照明工程学报》2022年第1期87-89,94,共4页China Illuminating Engineering Journal

摘　　要：本文设计了一种新型UVC LED封装结构,该结构可以有效提升封装器件的外量子阱效率。通过实验测试发现,在UVC芯片相同的前提下,新的UVC LED封装结构的辐射光功率比市场上主流封装结构,测试电流60 mA时的光辐射通量提升22%;测试电流120 mA时的光辐射通量提升35%,同时该封装结构有利于解决陶瓷基板铜杯难电镀的生产瓶颈,提升UVC陶瓷基板的生产效率,降低UVC LED封装器件成本。This paper designs a new type of UVC LED encapsulation structure.The structure can effectively improve packaging components’outer quantum well efficiency.Experimental tests show that compared with the market mainstream encapsulation structure,with the premise of the same UVC chip,the new UVC LED encapsulation structure produces 22%increase in radiation flux when test current is 60 mA and 35%increase when test current is 120 mA.Furthermore,the new encapsulation structure is helpful to solve the production bottleneck of difficult electroplating of copper cup on ceramic substrate and raise production efficiency of UVC ceramic substrates and decrease the cost of UVC LED encapsulation device.

关 键 词：UVC LED 量子阱效率 光辐射通量 

分 类 号：TN305.94[电子电信—物理电子学]