基于CMOS工艺的高线性宽带放大器芯片设计  

Design of the Wideband High-Linearity Amplifier Based on CMOS Process Technology

作　　者：何宁 李烁星[1,2] 张萌 何乐 HE Ning;LI Shuoxing;ZHANG Meng;HE Le(Aerospace Science&Industry Academy of Communication Technology,Chengdu Sichuan 610051,China;Joint Institute of Quantum Information and Communication SEU&ASIACT,Nanjing Jiangsu 211100,China)

机构地区：[1]航天科工通信技术研究院有限责任公司,四川成都610051 [2]东南大学航天科工通信技术研究院量子信息与通信联合研究中心,江苏南京211100

出　　处：《电子器件》2021年第6期1292-1297,共6页Chinese Journal of Electron Devices

基　　金：四川省科技计划项目;成都市蓉漂计划项目。

摘　　要：展示了一款基于TSMC 0.18μm RF CMOS工艺设计的高线性宽带放大器芯片,该芯片可覆盖P波段、L波段、S波段,实现宽带放大。放大器采用三级级联结构,包括输入级、中间级和输出级。输入级采用两级级联的共栅结构,在实现输入宽带匹配的同时,可有效提升隔离度,并提供一定的电压增益;中间级采用高输入阻抗的共源结构分布式放大电路,延展带宽,通过电压传递的方式降低级间匹配难度,减少片上电感使用;输出级在传统的共源结构基础上,通过电感负载及增加电阻负反馈的功率放大器设计方法,在延展带宽的同时提高了线性度,折中功率输出,PAE得到优化。芯片通过流片面积为0.7 mm×1.2 mm,测试结果显示,该放大器工作频率可覆盖500 MHz~2.5 GHz,工作带宽>1.5 GHz,相对带宽达到100%,OP_(1dB)>9 dBm,增益S_(21)>16 dB,达到了宽带放大和高线性度性能要求,验证了本文所述理论的正确性,满足综合射频(通信、雷达、电子战)应用需求。A wideband high linear amplifier is designed,which can cover P band,L band and S band and achieve broadband amplification.The amplifier adopts three-stage cascading structure with input stage,intermediate stage and output stage.The input stage adopts two-level cascade common-gate structure.In addition to the realization of input broadband match,it can improve the isolation degree and provide appropriate gain.Intermediate stage is a three-stage distributed common-source amplifier structure for extend bandwidth.Though voltage transfer,inter-stage match can be improved and inductor is reduced.Depend on the common source structure,the output stage is optimized with inductor load and resistance negative feedback for extending bandwidth and improving the linearity.It makes output power compromised and PAE optimized.The chip has been completed with the area of 0.7 mm×1.2 mm.Test results show that working frequency is 500 MHz~2.5 GHz,bandwidth>1.5 GHz,relative bandwidth achieves 100%,OP_(1dB)>9 dBm and S_(21)>16 dB,which indicated correctness of the theory and met the application requirements of integrated radio frequency(communication,radar,electronic warfare)completely.

关 键 词：宽带 高线性度 放大器芯片 射频CMOS工艺 

分 类 号：TP433[自动化与计算机技术]