基于封装原型的半导体激光器热分析建模研究  

Research on Thermal Analysis Modeling of Semiconductor Laser Based on Package Prototype

作　　者：马泽坤 林涛[1] 赵荣进 孙婉君 穆妍 李亚宁 解佳男 Ma Zekun;Lin Tao;Zhao Rongjin;Sun Wanjun;Mu Yan;Li Yaning;Xie Jianan(School of Automation&Information Engineering,Xi’an University of Technology,Xi’an,Shaanxi 710048,China)

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《激光与光电子学进展》2021年第23期157-165,共9页Laser & Optoelectronics Progress

基　　金：陕西省重点研发计划项目(2020GY-044);西安市科技计划项目(2020KJRC0077,2019219814SYS013CG035)。

摘　　要：为了在热仿真时得到可靠的有源层温度分布,采用基于芯片封装结构原型的808 nm高功率半导体激光器单管有限元模型,引入条型区、热沉覆铜层和键合引线等影响因素,研究了高功率半导体激光器单管稳态工作时有源层的热分布特性。在简易模型的基础上分别单独引入并计算了条型区、热沉覆铜层和键合引线对器件有源层平均温度的影响,将这些影响因素同时引入得到了本文新模型,并使用该模型和简易长方体堆叠模型仿真了半导体激光器单管稳态工作下的温度分布,得到有源层的平均温度分别为42.089℃和46.405℃,使用实验数据计算得到器件有源层的平均温度为41.708℃,简易模型的仿真结果误差为11.26%,本文模型的仿真结果误差为0.91%。对同一封装结构参数、不同转化效率和波长的多个高功率半导体激光器单管进行了热特性计算,进一步验证本文模型仿真结果的准确性。In this paper,a finite element model of an 808-nm high-power semiconductor laser single tube based on the actual package structure of the chip is used to obtain a reliable temperature distribution of the active layer during thermal simulation.The thermal distribution characteristics of the active layer during steady state operation are investigated by introducing various influence factors,such as ridge,copper layer on heatsink,and bonded wires.First,based on the simple finite element model,the effects of the stripe region,copper heatsink layer,and bonding wire on the average temperature of the active layer of the device were introduced and calculated.Then,these influence factors were simultaneously used to obtain the new model.The average temperatures of the active layer obtained with the simple model and the new model were 42.089 ℃ and 46.405 ℃,respectively.The average temperature of the active layer of the device calculated using experimental data of output wavelength variation with injection current was 41.708℃.Simulation results of the simple model showed an error of 11.26%.The error of simulation results of the proposed model is 0.91%.Finally,the thermal characteristics of several high-power semiconductor laser single tubes with the same package structure parameters and different conversion efficiencies and wavelengths were calculated to verify the accuracy of the simulation results.

关 键 词：激光器 高功率半导体激光器 有限元模型 单管 热分析 有源层平均温度 

分 类 号：TN248.4[电子电信—物理电子学]