Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer  

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作  者:Lingrong Jiang Jianping Liu Lei Hu Liqun Zhang Aiqin Tian Wei Xiong Xiaoyu Ren Siyi Huang Wei Zhou Masao Ikeda Hui Yang 江灵荣;刘建平;胡磊;张立群;田爱琴;熊巍;任霄钰;黄思溢;周伟;池田昌夫;杨辉(Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;School of Nano-tech and Nano-bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China;Nano Science and Technology Institute,University of Science and Technology of China,Hefei 230026,China)

机构地区:[1]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China [2]School of Nano-tech and Nano-bionics,University of Science and Technology of China,Hefei 230026,China [3]Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China [4]Nano Science and Technology Institute,University of Science and Technology of China,Hefei 230026,China

出  处:《Chinese Optics Letters》2021年第12期45-50,共6页中国光学快报(英文版)

基  金:supported by the National Natural Science Foundation of China(Nos.61834008,61574160,61804164;61704184);National Key Research and Development Program of China(Nos.2017YFE0131500 and2017YFB0405000);Natural Science Foundation of Jiangsu Province(No.BK20180254);China Postdoctoral Science Foundation(No.2018M630619)。

摘  要:Absorption induced by activated magnesium(Mg)in a p-type layer contributes considerable optical internal loss in Ga Nbased laser diodes(LDs).An LD structure with a distributed polarization doping(DPD)p-cladding layer(CL)without intentional Mg doping was designed and fabricated.The influence of the anti-waveguide structure on optical confinement was studied by optical simulation.The threshold current density,slope efficiency of LDs with DPD p-CL,and Mg-doped CL,respectively,were compared.It was found that LDs with DPD p-CL showed lower threshold current density but reduced slope efficiency,which were caused by decreasing internal loss and hole injection,respectively.

关 键 词:polarization doping internal loss GaN laser diode 

分 类 号:TN31[电子电信—物理电子学]

 

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