真空蒸馏-籽晶定向凝固工艺制备半导体用高纯铟  

Preparation of High Purity Indium for Semiconductor by Vacuum Distillation and Seeded Directional Solidification Process

作　　者：陈丽诗 伍美珍 卢兴伟 贾元伟 张家涛 彭巨擘 CHEN Li-shi;WU Mei-zhen;LU Xing-wei;JIA Yuan-wei;ZHANG Jia-tao;PENG Ju-bo(R&D Center of Yunnan Tin Group(Holding)Company Limited,Kunming 650106,Yunnan,China)

机构地区：[1]云南锡业集团(控股)有限责任公司研发中心,云南昆明650106

出　　处：《矿冶工程》2022年第1期99-102,107,共5页Mining and Metallurgical Engineering

基　　金：云南省稀贵金属材料基因工程(202002AB080001)。

摘　　要：采用真空蒸馏-籽晶定向凝固工艺制备6N及以上高纯铟,考察了蒸馏温度、凝固速度及凝固次数对杂质脱除率的影响,并对半导体用高纯铟进行了表面分析及其纯度测定。结果表明,真空蒸馏温度1273 K、保温时间60 min、定向凝固温度150~170℃、籽晶转速5 r/min、坩埚转速15 r/min、凝固速度20 mm/h、凝固次数3次条件下,高纯铟产品纯度达到6N及以上超高纯铟标准,该工艺所得金属铟结晶度高,呈现出片状结构,金属呈单晶相,实现了6N及以上金属铟的稳定结晶,并且金属铟没有腐蚀和表面氧化,该半导体用高纯铟制备工艺所得产品纯度高、制备过程能耗低和效率高,利于实现产业化。The high purity indium(6 N and above)was prepared by adopting vacuum distillation and seeded directional solidification(DS)process.The influences of distillation temperature,solidification rate and solidification times on impurity removal rate were investigated,and the surface of high purity indium used for semiconductor was analyzed.Then content and purity of impurity elements were determined.The results show that by adopting the vacuum distillation and seeded DS process under the following conditions,including vacuum distillation at a temperature of 1273 K,the holding time of 60 min,DS at 150~170℃,the seeded crystal at a rotation speed of 5 r/min,the crucible at a rotation speed of 15 r/min,and 3 times of solidification at a speed of 20 mm/h,the finally prepared indium product can meet the high-purity standard of 6 N or above.It is found that the obtained metal indium has high crystallinity.It is of sheet structure with single-crystal phase.Also,the indium product with the stable crystallization and without corrosion and surface oxidation is up to 6 N and above standard.Such processing technique can produce a high purity indium for semiconductor,with low energy consumption and high efficiency,thus it is conductive to the follow-up industrialization.

关 键 词：真空蒸馏 定向凝固 提纯 高纯铟 半导体 

分 类 号：TF84[冶金工程—有色金属冶金]