车规SiC MOSFET极限寿命评估后漏电失效机理  

Leakage Failure Mechanism of Automotive SiC MOSFET After Limit Life Test

作　　者：张宇隆 黄凯 黄以明 郑广州 ZHANG Yu-long;HUANG Kai;HUANG Yi-ming;ZHENG Guang-zhou(National New Energy Vehicle Technology Innovation Center,Beijing 100176,China)

机构地区：[1]国家新能源汽车技术创新中心,北京100176

出　　处：《电力电子技术》2021年第12期40-42,54,共4页Power Electronics

基　　金：北京科委基金项目(G180600601)。

摘　　要：针对碳化硅(SIC)金属氧化物半导体场效应晶体管(MOSFET)失效机理的研究,此前主要集中在雪崩失效机理和短路失效机理方面,而对其在极限应力寿命试验后的失效机理研究较少。针对某国产车规SiC MOSFET在高温高湿反偏(H3TRB)和温度循环(TC)极限应力下的漏电失效模式,通过I-U曲线测试、超声扫描检测、漏电/缺陷点定位和失效物理分析等方法,对其失效机理进行了剖析。研究发现衬底材料缺陷和芯片贴片不佳分别导致了器件在H3TRB和TC试验后发生失效。国产SiCMOSFET工艺尚不够成熟,衬底材料缺陷和芯片贴片不佳是两种典型的工艺薄弱环节,后续国产同类器件应加以识别和改进。The research on the failure mechanism of silicon carbide(SiC)metal-oxide-semiconductor field effect tran-sistor(MOSFET)mainly focused on the avalanche and short-circuit,but there is little research on the failure mecha-nism of SiC MOSFET after the limit stress life test.Aiming at the leakage failure mode of a domestic automotive SiC MOSFET after high temperature and high humidity reverse bias(H3TRB)and temperature cycle(TC)limit stress.The failure mechanism is analyzed by means of I-U curve test,ultrasonic scanning detection,leakage/defect point location and physical failure analysis.It is found that the defect of substrate material and poor chip placement lead to the fail-ure of the device after H3TRB and TC respectively.The process of domestic SiC MOSFET is not mature enough.The defects of substrate materials and poor chip placement are two typical process weaknesses.Similar domestic devices should be identified and improved in the future.

关 键 词：金属氧化物半导体场效应晶体管 漏电 失效机理 

分 类 号：TN3[电子电信—物理电子学]