阱内δ掺杂GaSbBi单量子阱红外发光效率的光致发光光谱研究  

Infrared emission efficiency ofδ-doped GaSbBi single quantum well by photoluminescence spectroscopy

作　　者：马楠 窦程 王嫚 朱亮清[2] 陈熙仁[2] 刘锋[1] 邵军[2] MA Nan;DOU Cheng;WANG Man;ZHU Liang-Qing;CHEN Xi-Ren;LIU Feng;SHAO Jun(Department of Physics,Shanghai Normal University,Shanghai 200234,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]上海师范大学数理学院,上海200234 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2022年第1期317-322,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金项目(11974368,61675224);上海市自然科学基金和科学仪器领域项目(18ZR1446100,20142201000);中国科学院上海技术物理研究所创新项目(CX-289)。

摘　　要：采用变激发功率红外光致发光(Photoluminescence,PL)光谱方法研究四个不同阱内δ掺杂面密度的GaSb_(0.93)Bi_(0.07)/GaSb单量子阱(Single Quantum Well,SQW)及其非掺杂SQW参考样品。通过分析GaSbBi SQW和GaSb势垒/衬底成分的PL强度演化,发现阱内δ掺杂导致红外辐射效率显著降低,相对下降幅度约为33%-75%。进一步分析结果表明,发光效率下降来源于界面恶化引发的“电子损失”和阱内晶格质量下降导致的“光子损失”的共同作用。这一工作有望为稀Bi红外发光器件的性能优化提供帮助。In this work,excitation power-dependent infrared photoluminescence(PL)measurements were carried out on four GaSb_(0.93)Bi_(0.07)/GaSb single quantum well(SQW)samples with different in-wellδ-doping density as well as the corresponding reference SQW samples without doping.PL integral-intensity evolutions of the GaSbBi SQW and the GaSb barrier/substrate show a significant decrease in the infrared emission efficiency caused by the in-wellδ-doping.The doping-induced relative decrease rate is about 33%-75%.Further analysis indicates that the reduction of the infrared emission efficiency is a co-consequence of the"electron loss"caused by the interfacial deterioration and the"photon loss"caused by the GaSbBi lattice quality deterioration.This work may be helpful in optimizing the performance of diluted Bi infrared light-emitting devices.

关 键 词：红外光致发光 GaSbBi 发光效率 阱内δ掺杂 

分 类 号：TN304[电子电信—物理电子学] O657.33[理学—分析化学]