低成本氧化铟锡基底的制备及其SERS活性  

Low-Cost Indium Tin Oxide Substrates: Preparation and Its Surface Enhanced Raman Scattering Effet

作　　者：朱化强 龙开琳 刘风坤 ZHU Huaqiang;LONG Kailin;LIU Fengkun(School of Physics and Electronic Science,Guizhou Normal University,Guiyang 550025,China;Guiyang Industrial Technology Institute,Guiyang 550081,China)

机构地区：[1]贵州师范大学物理与电子科学学院,贵阳550025 [2]贵阳产业技术研究院,贵阳550081

出　　处：《人工晶体学报》2022年第2期263-270,共8页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11864007);贵州省科学技术基金(黔科合基础[2020]1Y203);贵州省教育厅职业教育科研项目(GZZJ-Z2020006)。

摘　　要：本文采用脉冲激光沉积和真空退火的方法在铝箔上制备氧化铟锡(indium tin oxide, ITO)表面增强拉曼散射(surface-enhanced Raman scattering, SERS)活性基底,并研究了ITO基底的SERS特性。沉积了700、1 000、1 300、1 600、2 000五组脉冲数的基底,测量结果显示薄膜厚度与脉冲数接近线性关系,当ITO薄膜厚度为60.80 nm(脉冲数为1 300)时,拉曼信号的增强程度达到最大值,其拉曼强度是Au基底的2~3倍。研究表明,真空退火能够显著提升ITO基底的拉曼增强效果,不同厚度的ITO薄膜基底均具有明显的SERS增强效果,可以通过控制薄膜厚度对ITO基底进行SERS调控。这些研究结果可为后续ITO材料SERS研究及应用提供参考依据。In this paper, the surface-enhanced Raman scattering(SERS) active substrates of indium tin oxide(ITO) were prepared on aluminum foil by laser pulse deposition and vacuum annealing, and the SERS characteristics of ITO substrates were investigated. Five substrates with pulse numbers of 700, 1 000, 1 300, 1 600 and 2 000 were deposited. The measurements show that the film thickness is close to the linear relationship with the pulse number. When the thickness of ITO film is 60.80 nm with the pulse number of 1 300, the enhancement degree of Raman signal reaches the maximum, and the Raman intensity of the prepared ITO substrate is about 2 to 3 times that of the Au substrate. The results show that vacuum annealing can significantly improve the Raman enhancement effect of ITO substrates. All substrates with different thicknesses of ITO films have obvious SERS enhanced effect. SERS enhancement effect of the ITO substrates can be adjusted by varying the film thickness. These results provide a reference for subsequent SERS research and application of indium tin oxide.

关 键 词：氧化铟锡 脉冲激光沉积 真空退火 脉冲数 表面增强拉曼散射 表面等离激元 低成本 

分 类 号：O657.37[理学—分析化学]