Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN  

作　　者：ZHE ZHUANG DAISUKE IIDA KAZUHIRO OHKAWA 

机构地区：[1]Computer,Electrical and Mathematical Sciences and Engineering(CEMSE)Division,King Abdullah University of Science and Technology(KAUST),Thuwal 23955-6900,Saudi Arabia

出　　处：《Photonics Research》2021年第12期2429-2434,共6页光子学研究（英文版）

基　　金：King Abdullah University of Science and Technology(BAS/1/1676-01-01)。

摘　　要：We describe 5μm squircle InGaN-based red,green,and blue(RGB)monochromatic micro-light-emitting diodes(μLEDs)with an interpitch of 4μm by pixilation of conductive p-GaN using a H2-plasma treatment.The p-GaN was passivated by H2 plasma and prevented the current’s injection into the InGaN quantum wells below.We observed that InGaN-based redμLEDs exhibited a broader full width at half-maximum and larger peak wavelength blueshift at 11.5-115 A/cm^(2) than the green/blueμLEDs.The on-wafer light output power density of the redμLEDs at a wavelength of 632 nm at 115 A/cm^(2) was approximately 936 mW/cm^(2),the highest value reported thus far for InGaN-based redμLEDs.This value was comparable with that of the green/blueμLEDs at 11.5 A/cm^(2),indicating that the redμLEDs can satisfy the requirement of high brightness levels for specific displays.The color gamut based on InGaN RGBμLEDs covered 83.7%to 75.9%of the Rec.2020 color space in the CIE 1931 diagram at 11.5 to 115 A/cm^(2).

关 键 词：DIODE CONDUCTIVE light 

分 类 号：TN312.8[电子电信—物理电子学]