Bifunctional ultraviolet light-emitting/detecting device based on a SnO_(2) microwire/p-GaN heterojunction  

作　　者：TONG XU MINGMING JIANG PENG WAN KAI TANG DANING SHI CAIXIA KAN 

机构地区：[1]College of Science,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China

出　　处：《Photonics Research》2021年第12期2475-2485,共11页光子学研究（英文版）

基　　金：Open Fund of Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education(INMD-2020M03);Fundamental Research Funds for the Central Universities(NT2020019);National Natural Science Foundation of China(11774171,11874220,11974182,21805137)。

摘　　要：SnO_(2)has attracted considerable attention due to its wide bandgap,large exciton binding energy,and outstanding electrical and optoelectronic features.Owing to the lack of reliable and reproducible p-type SnO_(2),many challenges on developing SnO_(2)-based optoelectronic devices and their practical applications still remain.Herein,single-crystal SnO_(2)microwires(MWs)are acquired via the self-catalyzed approach.As a strategic alternative,n-SnO_(2)MW/p-GaN heterojunction was constructed,which exhibited selectable dual-functionalities of light-emitting and photodetection when operated by applying an appropriate voltage.The device illustrated a distinct near-ultraviolet light-emission peaking at∼395.0 nm and a linewidth∼50 nm.Significantly,the device characteristics,in terms of the main peak positions and linewidth,are nearly invariant as functions of various injection current,suggesting that quantum-confined Stark effect is essentially absent.Meanwhile,the identical n-SnO_(2)MW/p-GaN heterojunction can also achieve photovoltaic-type light detection.The device can steadily feature ultraviolet photodetecting ability,including the ultraviolet/visible rejection ratio(R_(360 nm)/R_(400 nm))∼1.5×10^(3),high photodark current ratio of 105,fast response speed of 9.2/51 ms,maximum responsivity of 1.5 A/W,and detectivity of 1.3×10^(13)Jones under 360 nm light at−3 V bias.Therefore,the bifunctional device not only displays distinct near-ultraviolet light emission,but also has the ability of high-sensitive ultraviolet photodetection.The novel design of n-SnO_(2)MW/p-GaN heterojunction bifunctional systems is expected to open doors to practical application of SnO_(2)microstructures/nanostructures for large-scale device miniaturization,integration and multifunction in next-generation high-performance photoelectronic devices.

关 键 词：HETEROJUNCTION optoelectronic ULTRAVIOLET 

分 类 号：TN23[电子电信—物理电子学]