大功率GaN器件接地特性与稳定性研究  

Research on the Ground Situation and Stability of Highly Output Power GaN Device

作　　者：孙引进 顾颖言[1] 蔡晓波[1] 谢宁[1] 蒋拥军[1] SUN Yin-jin;GU Yin-yan;CAI Xiao-bo;XIE Ning;JIANG Yong-jun(The 14th Research Institute of China Electronics Technology Group Corporation,Nanjing 210039,China)

机构地区：[1]中国电子科技集团公司第十四研究所,南京210039

出　　处：《微波学报》2022年第1期62-65,70,共5页Journal of Microwaves

摘　　要：GaN器件的工艺和技术进步,将输出功率提高到数百瓦甚至数千瓦量级。但是,大功率GaN器件相应的使用规范和标准,如接地要求,在仿真设计和工程应用中一直没有明确。文章针对大功率GaN器件的接地特性进行分析,通过仿真和试验验证了超大功率GaN器件功放电路中,接地条件对电路自身稳定性的重要性。明确了大功率和超大功率GaN器件的接地阻抗<1 mΩ使用标准,同时对接地金属接触表面的长期可靠性做出要求。With the development of GaN device technology, the output power is increased to hundreds of watts or even to kilowatts. However, the specifications and standards for high output power GaN devices, such as ground situation, have not been clearly defined in simulation design and engineering applications. In this paper, the ground situation of high output power GaN device is analyzed, and its importance to the stability of the power amplifier circuit in ultra-high power GaN devices is verified through simulation and experiment. The ground specification(<1 mΩ) in high output power GaN device employment and the long term reliability of the ground metal surface contacting the device substrate are defined.

关 键 词：GAN器件 大功率 接地特性 接触电阻 稳定性 

分 类 号：TN386[电子电信—物理电子学]