10μm间距长波1280×1024碲镉汞探测器研制进展  

Development of Long-Wavelength 1280×1024 HgCdTe Detectors with 10μm Pitch

作　　者：祁娇娇 冯晓宇 陈彦冠 宁提[1] 刘世光 孙浩[1] 康键[1] QI Jiao-jiao;FENG Xiao-yu;CHEN Yan-guan;NING Ti;LIU Shi-guang;SUN Hao;KANG Jian(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2022年第2期1-6,共6页Infrared

摘　　要：随着红外技术的进步,红外探测器组件向着更小尺寸、更高分辨率的方向发展。小像元间距、大面阵规格是长波探测器发展的重要方向。通过对10 m像元间距、9 m截止波长、1280×1024阵列规格长波探测器的研究,突破了10 m间距长波像元成结技术、10 m像元间距铟柱制备及互连技术,制备了有效像元率大于等于99.4%、非均匀性小于等于4%的10 m间距长波1280×1024碲镉汞探测器芯片。With the advancement of infrared technology,infrared detector assemblies are developing towards smaller size and higher resolution.Small pitch and large area array specifications are important directions for the development of long-wavelength detectors.Through the research of 10 m pitch,9 m cut-off wavelength,and 1280×1024 long-wave detector arrays,breakthroughs have been made in 10 m-pitch long-wavelength pixel junction technology,10 m-pitch indium column preparation and interconnection technology.A long-wavelength 1280×1024 HgCdTe detector chip with an effective pixel rate of 99.4%or more and a non-uniformity of less than or equal to 4%has been developed.

关 键 词：小间距 1280×1024 长波 碲镉汞 

分 类 号：TN3[电子电信—物理电子学]