基于电致发光效应的非接触式碳化硅MOSFET结温在线检测方法研究  

Research on Non-contact On-line Junction Temperature Detection Method of SiC MOSFET Based on Electroluminescence Effect

作　　者：冒俊杰 高洪艺 李成敏[1] 罗皓泽[1] 李武华[1] 何湘宁[1] MAO Junjie;GAO Hongyi;LI Chengmin;LUO Haoze;LI Wuhua;HE Xiangning(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,Zhejiang Province,China)

机构地区：[1]浙江大学电气工程学院,浙江省杭州市310027

出　　处：《中国电机工程学报》2022年第3期1092-1102,共11页Proceedings of the CSEE

基　　金：国家杰出青年科学基金项目(51925702);浙江省自然科学基金项目(LQ21E070006);台达电力电子科教发展计划(DREG2020002)。

摘　　要：碳化硅(silicon carbide,SiC)金属半导体场效应管(metal semiconductor field effect transistor,MOSFET)以其优异的材料特性成为一种很有前景的高功率密度和效率的器件,其工作结温是评估器件运行可靠性的关键指标。文中提出一种基于SiC MOSFET体二极管电致发光效应的非接触式的在线结温检测方法。首先从理论角度分析SiC MOSFET体二极管电致发光的原理,并对电致发光的光谱特性进行研究,分析和比较可用于结温测量的3种温敏光参数。其次通过检测具备负温度系数的发光峰光强,并辅以对SiC MOSFET体二极管导通电流的检测,实现了结温的动态提取,检测分辨率达3.1mV/℃。并且在Buck电路中验证该方法的可行性,检测误差在±3℃以内。该方法基于SiC MOSFET体二极管的电致发光检测,具备固有电气隔离的特点,特别适用于高压应用场合下SiC MOSFET的非接触式结温检测。SiC MOSFET has become a promising device with high power density and efficiency due to its excellent material properties.The device junction temperature is a key indicator for evaluating operating reliability.A non-contact online junction temperature detection method based on the electroluminescence effect of the SiC MOSFET body diode was proposed.First,the principle of electroluminescence of SiC MOSFET body diode was analyzed and the spectral characteristics of electroluminescence were studied.Three temperature sensitive optical parameters which could be used for junction temperature measurement were analyzed and compared.Secondly,the dynamic extraction of the junction temperature was realized by detecting the light intensity of the luminous peak with a negative temperature coefficient and the conduction current of the SiC MOSFET body diode.The detection resolution reached 3.1 mV/℃.The feasibility of this method was verified in the Buck circuit,and the detection error was within±3℃.This method was based on the electroluminescence detection of the SiC MOSFET body diode,which had the characteristics of inherent electrical isolation and was especially suitable for the non-contact junction temperature detection of SiC MOSFETs in high voltage applications.

关 键 词：电致发光效应 SiC MOSFET 可靠性 温敏光参数 结温检测 

分 类 号：TM47[电气工程—电器]