基于GaAs pHEMT的1.0~2.4 GHz放大衰减多功能芯片  

1.0~2.4 GHz Amplification and Attenuation Multi-Function Chip Based on GaAs pHEMT

作　　者：韩思扬 张坤 周平 蒋冬冬 HAN Siyang;ZHANG Kun;ZHOU Ping;JIANG Dongdong(Sichuan Province Engineering Research Center for Broadband Microwave Circuit High Density Integration,Chengdu 610036,China)

机构地区：[1]四川省宽带微波电路高密度集成工程研究中心,四川成都610036

出　　处：《电子工艺技术》2022年第2期90-93,108,共5页Electronics Process Technology

摘　　要：基于0.25μm GaAs赝高电子迁移晶体管(pHEMT)工艺,研制了一种1.0~2.4 GHz的放大衰减多功能芯片,该芯片具有低噪声、高线性度和增益可数控调节等特点。电路由第一级低噪声放大器、4位数控衰减器、第二级低噪声放大器依次级联构成,同时在片上集成了TTL驱动电路。为获得较大的增益和良好的线性度,两级低噪声放大器均采用共源共栅结构(Cascode)。测试结果表明,在1.0~2.4 GHz频带范围内,该芯片基态小信号增益约为36 dB,噪声系数小于1.8 dB,输出1 dB压缩点功率大于16 dBm,增益调节范围为15 dB,调节步进1 dB,衰减RMS误差小于0.3 dB,输入输出电压驻波比小于1.5。其中放大器采用单电源+5 V供电,静态电流小于110 mA,TTL驱动电路采用-5 V供电,静态功耗小于3 mA。整个芯片的尺寸为3.5 mm×1.5 mm×0.1 mm。Based on the GaAs pseudomorphic high electron mobility transistor(pHEMT)technology,a 1.0~2.4 GHz amplification and attenuation multi-function chip is developed.The chip has the characteristic of low noise,high linearity and gain adjustable.The circuit is implemented by cascade the first stage low noise amplifier,4-bit digital attenuator and the second stage low noise amplifier in sequential.The TTL drive circuit is also integrated on chip.In order to obtain higher gain and linearity,the LNA is designed with the cascode structure.The test results show that in the frequency range of 1.0~2.4 GHz,the reference state small signal gain of the chip is about 36 dB,the noise figure is less than 1.8 dB,the output power is more than 16 dBm at 1 dB compression point,the adjusted gain range is 15 dB and the minimum step is 1 dB,the RMS error of attenuation is less than 0.3 dB,both the input and output voltage standing wave ratio(VSWR)are less than 1.5.Besides,the LNA can be directly driven by a single 5 V supply,and the quiescent current is less than 110 mA.The TTL drive circuit be driven by-5 V,and the quiescent current is less than 3 mA.The chip area is3.5 mm×1.5 mm×0.1 mm.

关 键 词：GaAs赝高电子迁移率晶体管(pHEMT) 共源共栅结构 放大衰减多功能芯片 

分 类 号：TN40[电子电信—微电子学与固体电子学]