The“gene”of reversible phase transformation of phase change materials:Octahedral motif  

作　　者：Zhitang Song Ruobing Wang Yuan Xue Sannian Song 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-System and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Nano Research》2022年第2期765-772,共8页纳米研究（英文版）

基　　金：supported by the National Key Research and Development Program of China(Nos.2017YFA0206101 and 2017YFB0701703);Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB44010200);the National Natural Science Foundation of China(Nos.91964204,61874129,and 61874178);Science and Technology Council of Shanghai(Nos.20501120300 and 18DZ2272800);fund of the State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals,and Genetic Engineering of Precious Metal Materials in Yunnan Province(I)-Construction and Application of Precious Metal Materials Professional Database(I)(No.202002AB080001-1).

摘　　要：Nonvolatile phase change random access memory(PCRAM)is regarded as one of promising candidates for next-generation memory in the era of Big Data.The phase transition mechanism of phase change materials is the key scientific issue to be addressed for phase change memory.Moreover,obtaining homogeneous phase change materials with high speed,low power consumption,long life and good thermal stability is still the ultimate challenge for high-density three-dimensional(3D)PCRAM.In this paper,starting from the octahedral structure motifs(octahedrons)which are considered as the"gene"of phase change materials,a new view on the phase transition mechanism is proposed.Based on this mechanism,a homogeneous phase change material is developed by constructing three matched octahedrons,which achieved an overall improvement in performance,showing 180℃ten-year data retention,6 ns SET speed,one order of magnitude longer life time and 75%reduced power consumption compared with traditional Ge_(2)Sb_(2)Te_(5)(GST)devices.It is of great significance to use it in 3D PCRAM chip and multi-level brain-inspired computing chip in the future.

关 键 词：phase change memory phase transition mechanism octahedral atomic motifs matching high density 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]