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作 者:Yin Yin Guanyong Wang Chen Liu Haili Huang Jiayi Chen Jiaying Liu Dandan Guan Shiyong Wang Yaoyii Li Canhua Liu Hao Zheng Jinfeng Jia
机构地区:[1]Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),Shenyang National Laboratory for Materials Science,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China [2]Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,China [3]Tsung-Dao Lee Institute,Shanghai 200240,China [4]CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China
出 处:《Nano Research》2022年第2期1115-1119,共5页纳米研究(英文版)
基 金:the Ministry of Science and Technology of China(Nos.2019YFA0308600,2020YFA0309000,2016YFA0301003,and 2016YFA0300403);the National Natural Science Foundation of China(NSFC)(Nos.11521404,11634009,92065201,11874256,11874258,12074247,11790313,and 11861161003);the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB28000000);the Science and Technology Commission of Shanghai Municipality(Nos.2019SHZDZX01,19JC1412701,and 20QA1405100);partial support.GYW is funded by China Postdoctoral Science Foundation(No.2021M693095)。
摘 要:Moire superlattice has recently been found in topological insulators,which can lead to periodic modulation on the electronic structure.In this work,we report the low-temperature scanning tunneling microscopy study of Sb_(2)Te_(3) films grown on graphitized 4H-SiC.We find that substrate temperature can strongly influence the rotation angles between Sb_(2)Te_(3) film and graphene substrate.Three kinds of moire patterns are observed at the first quintuple layer Sb_(2)Te_(3) film under different substrate temperatures.One shows complicated patterns with a rotation angle of nearly 0°relative to the substrate,another just exhibits simple 1 ×1 structure with a rotation angle of 30°.Other rotation angle like 8.2°is observed at higher substrate temperature as well,which is relatively rare.Comparison of the d//dV curves from Sb_(2)Te_(3) films with different moire patterns indicates that the superstructure can offer degrees of freedom in tailoring electronic structure.This work may stimulate the further study on the moire modulation to the electronic properties of topological insulators.
关 键 词:moire pattern topological insulator electronic structure scanning tunneling microscopy
分 类 号:TB3[一般工业技术—材料科学与工程]
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