Direct synthesis of large-area Al-doped graphene by chemical vapor deposition:Advancing the substitutionally doped graphene family  

作　　者：Sami Ullah Yu Liu Maria Hasan Wenwen Zeng Qitao Shi Xiaoqin Yang Lei Fu Huy Q.Ta Xueyu Lian Jingyu Sun Ruizhi Yang Lijun Liu Mark H.Rummeli 

机构地区：[1]College of Energy Soochow Institute for Energy and Materials Innovations,Soochow University,Suzhou 215006,China [2]Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province,Soochow University,Suzhou 215006,China [3]NUTECH School of Applied Sciences&Humanities and Computer Engineering Department,National University of Technology,Islamabad 42000,Pakistan [4]Centre of Polymer and Carbon Materials,Polish Academy of Sciences,M.Curie-Sklodowskiej 34,Zabrze 41-819,Poland [5]School of Energy and Power Engineering,Xian Jiaotong University,Xian 710049,China [6]College of Chemistry and Molecular Science,Wuhan University,Wuhan 430072,China [7]Institute for Complex Materials IFW Dresden 20 Helmholtz Strasse,Dresden 01069,Germany [8]Institute of Environmental Technology,VSB-Technical University of Ostrava,17.listopadu 15,Ostrava 70833,Czech Republic

出　　处：《Nano Research》2022年第2期1310-1318,共9页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(NSFC,No.52071225);the National Science Center,and the Czech Republic under the ERDF program“Institute of Environmental Technology-Excellent Research”(No.CZ.02.1.01/0.0/0.0/16-019/0000853);M.H.R.and L.F.thank the Sino-German Research Institute for support(No.GZ 1400).

摘　　要：Graphene doping continues to gather momentum because it enables graphene properties to be tuned,thereby affording new properties to,improve the performance of,and expand the application potential of graphene.Graphene can be chemically doped using various methods such as surface functionalization,hybrid composites(e.g.,nanoparticle decoration),and substitution doping,wherein C atoms are replaced by foreign ones in the graphene lattice.Theoretical works have predicted that graphene could be substitutionally doped by aluminum(Al)atoms,which could hold promise for exciting applications,including hydrogen storage and evolution,and supercapacitors.Other theoretical predictions suggest that Al substitutionally doped graphene(AIG)could serve as a material for gas sensors and the catalytic decomposition of undesirable materials.However,fabricating Al substitutionally doped graphene has proven challenging until now.Herein,we demonstrate how controlled-flow chemical vapor deposition(CVD)implementing a simple solid precursor can yield high-quality and large-area monolayer AIG,and this synthesis is unequivocally confirmed using various characterization methods including local electron energy-loss spectroscopy(EELS).Detailed high-resolution transmission electron microscopy(HRTEM)shows numerous bonding configurations between the Al atoms and the graphene lattice,some of which are not theoretically predicted.Furthermore,the produced AIG shows a CO_(2) capturability superior to those of other substitutionally doped graphenes.

关 键 词：aluminum-doped graphene single-solid precursor chemical vapor deposition carbon dioxide capture energy storage catalytic applications 

分 类 号：TB3[一般工业技术—材料科学与工程]