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作 者:Bo-Wei Xie Fa-Zhu Ding Hong-Jing Shang Da-Xing Huang Tai-Guang Li Qi Zou Ji-Liang Zhang Hong-Wei Gu
机构地区:[1]Key Laboratory of Applied Superconductivity,Chinese Academy of Sciences,Beijing 100190,China [2]Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China [3]University of Chinese Academy of Sciences,Beijing 100049,China [4]Department of Materials Science and Engineering,Korea University,Seoul 02841,Republic of Korea
出 处:《Rare Metals》2021年第12期3668-3675,共8页稀有金属(英文版)
基 金:financially supported by the National Natural Science Foundation of China(Nos.U1832131 and51721005);Beijing Municipal Natural Science Foundation(No.3202034);the Natural Science Foundation of Hebei Province(No.E2018402097)。
摘 要:A highly c-axis-oriented aluminum nitride(Al N)thin film with smooth and crack-free surface was fabricated by an off-normal direct current(DC)sputtering method in a pure nitrogen atmosphere,in which the rotatable substrate holder positioned in the middle of four side targets was a key approach to guarantee the grain growth with no tilt.The detailed effects of substrate angle on the c-axis orientation of Al N films were investigated by varying the substrate angle from 0°to 90°.Moreover,theoretical analysis and Monte Carlo(MC)simulation reveal that the oblique or even vertical angle could improve the lateral kinetic energy of sputtered atoms deposited on the growing film.A variety of examining techniques including X-ray diffraction(XRD),(002)peak rocking curve,scanning electron microscopy(SEM)were conducted to evaluate the angle dependence on the crystallographic orientation.These test results indicate that larger substrate angle is beneficial to the(002)growth of Al N thin film,and a fully c-axis textured Al N thin film is obtained at 90°with small surface roughness(R_(a))of 3.32 nm.
关 键 词:AlN film c-axis orientation Off-normal DC sputtering Rotating substrate Side target
分 类 号:TB383.2[一般工业技术—材料科学与工程]
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