SiC MOSFET高频逆变器散热系统设计  

Design on Heat Dissipation System of the SiC MOSFET High Frequency Inverter

作　　者：张宇[1] 张志锋[1] ZHANG Yu;ZHANG Zhifeng(Shenyang University of Technology,110870)

机构地区：[1]沈阳工业大学,110870

出　　处：《电机技术》2022年第1期12-17,共6页Electrical Machinery Technology

摘　　要：针对基于SiCMOSFET的高频逆变器,提出了一种散热系统的实用设计方法,首先对Si CMOSFET进行损耗计算,考虑了驱动电阻、直流母线电压以及电流等对Si CMOSFET损耗的影响,使计算结果较为准确。其次,建立散热系统的热阻模型,计算工作时各点的温度,在此基础上设计了一套强迫风冷系统,并运用F loT H E R M热仿真软件进行热仿真。将计算结果与仿真结果进行比较,证明了此设计的合理性。A practical design method of the heat dissipation system for the high frequency inverter is proposed based on the SiC MOSFET.Firstly,loss of the SiC MOSFET is calculated,while influences on SiC MOSFET loss by the driving resistance,DC bus voltage and current are taking into account,to make the calculation result more accurate.Secondly,the thermal resistance model of the heat dissipation system is established,and the temperature of each point is calculated.On this basis,a set of forced air cooling system is designed,and the FloTHERM thermal simulation software is applied into the thermal simulation.Calculation results are compared with the simulation results to prove the rationality of the design.

关 键 词：SiC MOSFET 损耗计算 热阻 散热系统 

分 类 号：TM302[电气工程—电机]