Oxygen vacancies modulating self-powered photoresponse in PEDOT:PSS/ε-Ga_(2)O_(3)heterojunction by trapping effect  

作　　者：LI Shan YUE JianYing LU Chao YAN ZuYong LIU Zeng LI PeiGang GUO DaoYou WU ZhenPing GUO YuFeng TANG WeiHua 

机构地区：[1]Laboratory of Information Functional Materials and Devices,School of Science,State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China [2]College of Electronic and Optical Engineering&College of Microelectronics,National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [3]Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China

出　　处：《Science China(Technological Sciences)》2022年第3期704-712,共9页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61774019,61704153)。

摘　　要：Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure?Certainly,the answer is yes.Herein,we experimentally verify that the photodetection performance modulation effect of oxygen vacancy(Vo)is transmitted from theε-Ga_(2)O_(3)layer to the PEDOT:PSS/ε-Ga_(2)O_(3)(PGO)hybrid heterojunction.By adopting the annealedε-Ga_(2)O_(3)films,whose Voconcentrations are remolded by annealing ambients,the constructed PGO photodetectors(PDs)demonstrate regulable self-powered performance.As the V_(o)defects decrease,the photodetection properties are effectively enhanced with a high photo-to-dark current ratio of 2.37×10^(7),an excellent on/off switching ratio of 6.45×10^(5),fast rise/decay time of 121/72 ms,a large responsivity of 67.9 m A/W,superior detectivity of 9.2×10^(13)Jones,an outstanding external quantum efficiency of 33.2%,and a high rejection ratio(R_(250)/R_(400))of 5.96×10^(6)at 0 V in PGO-O;PD.The better photoresponse is attributed to the less V_(o)defect concentration in theε-Ga_(2)O_(3)layer,which could favor the lower electron-trapping probability and a more efficient charge-carrier transfer.Considering the universality of V_(o)defects in oxide materials,the proposed regulation strategy of photoresponse will open the route of high self-powered performance for next-generation ultraviolet PDs.

关 键 词：oxygen vacancy SELF-POWERED PHOTODETECTOR HETEROJUNCTION PEDOT:PSS/ε-Ga2O3 

分 类 号：TQ133.51[化学工程—无机化工] TN36[电子电信—物理电子学]