SOI压力芯片敏感电阻条刻蚀研究  

Sensitive resistance bar etching research of pressure-sensitivechip based on SOI

作　　者：吴佐飞 齐虹 张岩 尚瑛琦 刘嘉铭 岳宏 WU Zuofei;QI Hong;ZHANG Yan;SHANG Yingqi;LIU Jiaming;YUE Hong(The 49th Research Institute of China Electronics Technology Group Corporation,Harbin 150028,China)

机构地区：[1]中国电子科技集团公司第四十九研究所,黑龙江哈尔滨150028

出　　处：《传感器与微系统》2022年第3期66-67,75,共3页Transducer and Microsystem Technologies

摘　　要：针对微机电系统(MEMS)绝缘体上硅(SOI)压力敏感芯片电阻条刻蚀过程中易损伤的问题,对敏感电阻条的刻蚀工艺进行优化设计,通过调整平板功率、气体流量比例等参数,最终找出最优的工艺参数,减少等离子体对敏感电阻条的侧向损伤,从而提高SOI压力敏感芯片的稳定性。Aiming at the problem that the sensitive resistance bar of pressure-sensitive chip based on micro-electro-mechanical system(MEMS)silicon on insulator(SOI)is easy to be damaged during etching process.Optimal design on etching process of sensitive resistance bar is carried out.By adjusting the plate power,gas flow ratio and other parameters,finally find the optimal process parameters.The etching parameters of sensitive resistance bar are optimized to reduce damage of plasma to the sensitive resistance bar and improve the stability of pressure-sensitive chip based on SOI.

关 键 词：绝缘体上硅压力敏感芯片 敏感电阻条刻蚀 稳定性 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]