漏电低软度大的3300V FRD设计  

3300V FRD Chips With Low Leakage Current and Big Softness

作　　者：高东岳 叶枫叶 张大华 骆健 周东海 冯会会 GAO Dong-yue;YE Feng-ye;ZHANG Da-hua;LUO Jian;ZHOU Dong-hai;FENG Hui-hui(NARI Group(State Grid Electrical Science Institute)Co.,Ltd.;NARI-GEIRI Semiconductor Co.,Ltd.)

机构地区：[1]南瑞集团(国网电力科学研究院)有限公司 [2]南瑞联研半导体有限责任公司

出　　处：《中国集成电路》2022年第3期61-65,共5页China lntegrated Circuit

基　　金：江苏省科技成果转化专项资金项目“智能电网用核心功率器件IGBT研发及产业化”,项目编号:BA2019007。

摘　　要：为了满足3300 V FRD反向漏电低,反向恢复软度大的应用要求,本文介绍了一种新的FRD设计。该设计通过优化阳极掺杂,采用轻离子辐照和电子辐照相结合的寿命控制方式来增加FRD的反向恢复软度,降低FRD的漏电流,通过台阶形场板保护环结构来降低保护环的漏电流。采用8英寸平面栅加工工艺得到的芯片封装成了3300 V/1500 A FRD模块。模块在高温150℃下的V_(F)为2.18 V,漏电流I_(R)为10 mA,反向恢复能量(E_(rec))为1665 mJ,关断软度为3.67,反向恢复极限di/dt为8000A/us时承受的功率可达3210 kW。To meet the application requirement of 3300 V FRD with low leakage current and big softness,a new FRD design was proposed.In the design,the softness was increased and cell leakage current was reduced by optimizing anode doping and light ions irradiation combined with electrons irradiation,the terminal leakage current was reduced by adopting the guard ring structure with stepped electric field plates.By adopting 8 inch planar gate process,FRD chips were fabricated and packaged to 3300 V/1500 A modules.The forward voltage(V_(F))of the modules was 2.18 V,reverse leakage current(I_(R))was 10 mA,and reverse recovery energy(E_(rec))was 1665 mJ,the softness was 3.67 and the maximum power was 3210 kW at di/dt=8000 A/us at the temperature of 150℃.This work is supported by the special fund project of the achievements transformation in science and technology of Jiangsu Province,(Reseach on the development and industralization of the core power device IGBTs utilized by Smart Grid.

关 键 词：反向漏电流 软度 轻离子辐照 电子辐照 台阶形场板 

分 类 号：TN322.8[电子电信—物理电子学]