真空电子器件输出窗次级电子倍增效应研究进展  

Research progress of secondary electron emission effect in output window of vacuum electronic devices

作　　者：张雨婷 崔万照[1] ZHANG Yuting;CUI Wanzhao(Key Laboratory of Science and Technology on Space Microwave,China Academy of Space Technology,Xi’an Shaanxi 710000,China)

机构地区：[1]中国空间技术研究院西安分院空间微波技术重点实验室,陕西西安710000

出　　处：《太赫兹科学与电子信息学报》2022年第1期58-66,共9页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金重点资助项目(U1537211);国家自然科学基金资助项目(61701394;11705142;51675421;11675278);空间微波技术重点实验室基金资助项目(6142411010101)。

摘　　要：真空电子器件在毫米波和太赫兹波频段具有大功率的天然优势,可用于构建高效率、大功率的毫米波和太赫兹辐射源,对高功率微波技术及太赫兹技术的发展具有十分重要的意义。输出窗是真空电子器件的关键部件,输出窗击穿是器件失效的主要原因之一,而次级电子倍增效应被认为是输出窗击穿的主要原因。本文梳理了目前分米波及厘米波波段真空电子器件输出窗的研究现状,在此基础上梳理了这一领域未来研究的主要发展方向,以期为未来真空电子器件向更高功率和更高频率等级发展提供参考。Vacuum electronic devices, with the natural advantage of high power in millimeter wave and terahertz bands, can be applied to construct high-efficiency and high-power radiation sources. This is of great significance to the development of high-power microwave technology and terahertz technology. The output window is one of the key components of vacuum electronic devices. The breakdown of the output window mainly accounts for the failure of the devices. The multipactor is considered as the main reason for the breakdown of the output window. This paper summarizes current advances of output window in the decimeter and centimeter-wave bands. On this basis, the tendencies of this research fields are predicted in order to provide reference for the future development of vacuum electronic devices in higher power and higher frequency levels.

关 键 词：真空电子器件 毫米波 太赫兹 输出窗 次级电子倍增效应 

分 类 号：TN101[电子电信—物理电子学]