溅射功率对Mo掺杂ZnO(MZO)透明导电薄膜的影响  

Effect of sputtering power on Mo doped ZnO(MZO)transparent conductive thin films

作　　者：李召阳 陈祎祎 雷金坤 李继文[1,2] 熊美 LI Zhaoyang;CHEN Yiyi;LEI Jinkun;LI Jiwen;XIONG Mei(Material Science & Engineering School, Henan University of Science & Technology,Luoyang 471023, China;National Joint Engineering Research Center for Abrasion Control and Molding of Metal Material,Luoyang 471003, China)

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471023 [2]金属材料磨损控制与成型技术国家地方联合工程研究中心,河南洛阳471023

出　　处：《功能材料》2022年第2期2114-2122,共9页Journal of Functional Materials

基　　金：国家自然科学基金项目(52002118);教育部长江学者和创新团队发展计划项目(IRT_1234)。

摘　　要：Mo原子具有较高的价态(+6),每个掺杂的Mo原子可以向ZnO晶体贡献4个自由电子,因此,Mo原子被认为是提高ZnO薄膜导电性的潜在掺杂剂。采用射频磁控溅射制备不同溅射功率下的MZO透明导电薄膜,研究溅射功率对MZO薄膜表面形貌、微观结构、组织以及光电性能的影响。实验结果表明,不同功率制备的MZO薄膜样品都沿(002)方向择优生长;MZO薄膜中的Mo离子以+6价存在;MZO薄膜的禁带宽度为3.41。此外,射频功率对MZO薄膜的表面形貌、晶体结构、电学和光学性质有很大影响。当溅射功率为150 W时,MZO薄膜具有最佳光电综合性能。此时,150 W的MZO薄膜的粒径为70.93 nm;在可见光范围内的平均透过率为81.85%,电阻率为9.2×10^(-4)Ω·cm。同时,利用椭偏仪对MZO薄膜的折射率和消光系数进行测试。通过测试结果计算了不同功率下MZO薄膜的复介电函数、耗散因子和能量损失函数。最后,根据有效单振子理论分析了MZO薄膜的色散特性。Mo is considered as one of the potential dopants for improving the properties of ZnO materials.Each Mo atom can contribute four free electrons to ZnO crystal for the large valence difference between Mo^(6+) and Zn^(2+) ions(+4).In this paper,MZO transparent conductive films with different sputtering power are prepared by RF magnetron sputtering.The effects of sputtering power on the surface morphology,microstructure,microstructure and photoelectric properties of MZO films are studied.The results show that the MZO films prepared by different powers all grow preferentially along the(002)direction.In MZO lattice,Mo atoms exist as Mo^(6+).And the band gap of MZO film is 3.41.In addition,RF power has great influence on the surface morphology,crystal structure,electrical and optical properties of MZO thin films.The MZO thin films under 150 W sputtering power have the best photoelectric comprehensive properties,which have a particle size of 70.93 nm,an average transmittance of 81.85%in the visible range and a resistivity of 9.2×10Ω·cm.Meanwhile,the refractive index and extinction coefficient of MZO thin films are measured by ellipsometer.The complex dielectric function,dissipation factor and energy loss function of MZO films at different power are calculated.Finally,the dispersion characteristics of MZO thin films are analyzed according to the effective single oscillator theory.

关 键 词：Mo掺杂ZnO 透明导电薄膜 电学性能 光学性能 

分 类 号：TB34[一般工业技术—材料科学与工程]