532 nm皮秒脉冲激光对单晶硅的损伤特性研究  

Damage characteristics of a 532 nm picosecond pulse laser on monocrystalline silicon

作　　者：王佳敏 季艳慧 梁志勇 陈飞[1] 郑长彬[1] WANG Jia-min;JI Yan-hui;LIANG Zhi-yong;CHEN Fei;ZHENG Chang-bin(State Key Laboratory of Laser-Matter Interaction,Changchun Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Institute of Tracking and Telecommunications Technology,Beijing 100094,China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所激光与物质相互作用国家重点实验室,吉林长春130033 [2]中国科学院大学,北京100049 [3]北京跟踪与通信技术研究所,北京100094

出　　处：《中国光学》2022年第2期242-250,共9页Chinese Optics

基　　金：国家重点研发计划资助项目(No.2018YFE0203203);中国科学院创新交叉团队(No.JCTD-2020-13);中科院长春光机所重大创新项目(No.E10302Y3M0)。

摘　　要：随着光电对抗和超短脉冲激光技术的发展,研究超短脉冲激光与单晶硅相互作用具有非常重要的理论和实际意义。为了进一步明确532 nm皮秒脉冲激光对单晶硅的损伤机理,本文开展了532 nm皮秒脉冲激光辐照单晶硅的损伤效应实验研究,测定了损伤阈值,明确了损伤机理,探讨了低通量下的脉冲累积效应。首先,利用波长为532 nm、脉冲宽度为30 ps的激光器和金相显微镜,基于1-on-1的激光损伤测试方法,测定了单晶硅的零损伤概率阈值为0.52 J/cm^(2);其次,研究了皮秒激光辐照单晶硅在不同激光能量密度下的损伤形貌,发现532 nm皮秒脉冲激光对单晶硅的损伤表现为热影响损伤和等离子体冲击损伤,随着激光能量密度的增大,按主要的损伤机制可将损伤程度分为:热影响(0.52~3 J/cm^(2))、热烧蚀(3~50 J/cm^(2))和等离子烧蚀(>50 J/cm^(2)),且不同情况下,损伤面积随激光能量密度分别对应不同的增长规律;最后,研究了低通量下多脉冲的累积效应,发现在0.52 J/cm^(2)的激光能量密度下,连续辐照16个脉冲时表面形成热影响区,验证了多脉冲的累积效应可以降低单晶硅的激光损伤阈值。With the development of optoelectronic countermeasures and ultrashort pulse laser technology,the study of the interaction between ultrashort pulse laser and monocrystalline silicon has a very important theoretical and practical significance.In order to further clarify the damage mechanism of 532 nm picosecond pulsed laser on monocrystalline silicon,we have conducted an experimental study to measure the damage threshold,clarify the damage mechanism,and discuss the pulse accumulation effect at low flux.Firstly,using a laser with a wavelength of 532 nm,a pulse width of 30 ps and a metallurgical microscope based on the 1-on-1 laser damage test method,the zero damage probability threshold is determined to be 0.52 J/cm^(2).Secondly,the damage effect of a picosecond laser irradiated on monocrystalline silicon was studied under different laser fluxes,and it was found that the damage of 532 nm picosecond laser to monocrystalline silicon is manifested as heated-effect damage and plasma impact damage.The increase in energy density can be divided into three stages according to the main damage mechanism:thermal effect(0.52~3 J/cm^(2)),thermal ablation(3~50 J/cm^(2))and plasma effect(>50 J/cm^(2)),and the damaged areas are corresponded to different growth laws with the laser energy density,respectively.Finally,an experiment for the multi-pulse cumulative effect was carried out at a low laser flux and it was found that at a laser energy density of 0.52 J/cm^(2),the surface was irradiated continuously for 16 shots.The formation of a heat-affected zone confirms that the cumulative effect of multiple pulses can lower the laser damage threshold on monocrystalline silicon.

关 键 词：皮秒脉冲激光 单晶硅 损伤阈值 累积效应 损伤特性 

分 类 号：TN249[电子电信—物理电子学]