Interfacial enhancement of Ag and Cu particles sintering using(111)-oriented nanotwinned Cu as substrate for die-attachment  

作　　者：Guo Rumeng Xiao Yubo Gao Yue Zhou Shiqi Liu Yang Liu Zhiquan 郭如梦;肖宇博;高悦;周士祺;刘洋;刘志权(Shenzhen Institute of Advanced Electronic Materials,Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China;Shenzhen College of Advanced Technology,University of Chinese Academy of Sciences,Shenzhen 518055,China;School of Material Science and Engineering,Harbin University of Science and Technology,Harbin 150040,China)

机构地区：[1]Shenzhen Institute of Advanced Electronic Materials,Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China [2]Shenzhen College of Advanced Technology,University of Chinese Academy of Sciences,Shenzhen 518055,China [3]School of Material Science and Engineering,Harbin University of Science and Technology,Harbin 150040,China

出　　处：《China Welding》2022年第1期22-28,共7页中国焊接（英文版）

摘　　要：The electroplated(111)-oriented nanotwinned-Cu(nt-Cu) film was utilized as substrate for Ag and Cu sinter joining to improve the weak interface connection between the metal paste and the substrate.It was found that both Cu and Ag sinter joints using(111)-oriented nt-Cu film exhibited a higher bonding strength than that using traditional random-oriented Cu film.Especially,the joints sintered with Cu paste on(111)-oriented nt-Cu film possessed a higher bonding strength of 53.7 MPa at the sintering condition of 300 °C,0.4 MPa in N2 atmosphere,compared to that on random-oriented Cu film with a value of 31.3 MPa.The results show that as metal substrate layer,the(111)-oriented nt-Cu film can improve the connection performance of Ag and Cu sinter joints,which could further promote their application in dieattachment technology for the next-generation power semiconductors.

关 键 词：nanotwinned copper sinter joining Ag and Cu paste interface bonding strength 

分 类 号：TN405[电子电信—微电子学与固体电子学] TG146.11[一般工业技术—材料科学与工程]