SiO_(2)掺杂对ZnO-Bi_(2)O_(3)基压敏陶瓷微观结构及电性能的影响  

The Effect of SiO_(2) Doping on the Microstructure and Electrical Properties of ZnO-Bi_(2)O_(3) Based Varistor Ceramics

作　　者：宋继光 李凯 陈蕊 徐仲勋 姜珊盼 毛航银 赵霞 许东杰 SONG Jiguang;LI Kai;CHEN Rui;XU Zhongxun;JIANG Shanpan;MAO Hangyin;ZHAO Xia;XU Dongjie(Pinggao Group CO.,LTD.Pingdingshan 467001,China;State Grid Zhejiang Electric Power CO.,LTD.Hangzhou,310000,China;China Electric Power Research Institute,Beijing 100192,China)

机构地区：[1]平高集团有限公司,平顶山467001 [2]国网浙江省电力有限公司,杭州310000 [3]中国电力科学研究院有限公司,北京100192

出　　处：《中国陶瓷》2022年第2期37-42,共6页China Ceramics

基　　金：国家电网有限公司科技项目资助(合同号:SGZJ0000KXJS1900180高性能氧化锌电阻片材料及生产制造技术)。

摘　　要：采用传统固相法成功制备了不同SiO_(2)掺杂量的ZnO-Bi_(2)O_(3)基压敏陶瓷。研究了SiO_(2)添加剂对ZnO-Bi_(2)O_(3)基压敏陶瓷物相组成、微观形貌和电性能的影响规律及作用机理。XRD结果表明,ZnO-Bi_(2)O_(3)基压敏陶瓷由ZnO主晶相和尖晶石相、富Bi相和含Si相等第二相组成。当SiO_(2)含量增加时,ZnO晶粒尺寸逐渐减小,压敏电压梯度E_(1m A)逐渐增大,这是由于二次相的钉扎效应所致。此外,随着SiO_(2)含量的增加,非线性系数α先增大后减小,而泄漏电流I_(L)先减小后增大,这是由于微观结构变化影响了晶界势垒高度。当SiO_(2)掺杂量为1.5 mol%时,ZnO压敏陶瓷的电性能最佳,E_(1mA)=504 V/mm,α=55,I_(L)=1.78μA。ZnO-Bi_(2)O_(3) based varistor ceramics with different doping amounts of SiO_(2) were successfully prepared by the traditional solid-state method.The influence of SiO_(2) additives on the phase,microstructure and electrical properties of ZnO-Bi_(2)O_(3) based varistor ceramics were investigated.XRD result shows that ZnO varistor ceramic is composed of ZnO as main crystalline phase and the spinel phase,Bi-rich phase and Si-containing phase as the second phase.With the increase of SiO_(2) amount,ZnO grain size gradually decreases,and breakdown voltage gradient E1mA gradually increases,which is due to the pinning effect of the secondary phase.In addition,with the increase of SiO_(2) content,the nonlinear coefficientαfirst increases and then decreases,while the leakage current IL first decreases and then increases.This is because the changes of microstructure affect the height of the grain boundary barrier.When the doping amount of SiO_(2) is 1.5 mol%,the electrical performance of ZnO varistor ceramics is the best:E_(1mA)=504 V/mm,α=55,I_(L)=1.78μA.

关 键 词：ZNO压敏陶瓷 SiO_(2)掺杂 电性能 微观结构 

分 类 号：TQ174.1[化学工程—陶瓷工业]