硅肖特基结自滤波窄带近红外光探测器的研究  

Self-filtered narrow-band near-infrared photodetectors based on Si Schottky junction

作　　者：刘浩 徐艳 宋龙梅 夏宇 于永强[1] LIU Hao;XU Yan;SONG Longmei;XIA Yu;YU Yongqiang(School of Electrical Science and Applied Physics, Hefei University of Technology, Hefei 230601, China)

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230601

出　　处：《合肥工业大学学报（自然科学版）》2022年第3期342-346,共5页Journal of Hefei University of Technology：Natural Science

基　　金：脉冲功率激光技术国家重点实验室开放基金资助项目(SKL2019KF09)。

摘　　要：窄带近红外光探测器因对特定波长有很高的灵敏度,在临床诊断、治疗设备或可穿戴的功能性监测设备等生物医学领域具有广阔的应用前景。文章基于硅基光吸收及肖特基结光生载流子收集特性的分析,首次采用Silvaco TCAD设计了光谱可调的硅/石墨烯肖特基二极管窄带近红外光探测器。利用湿法转移石墨烯电极制备了硅/石墨烯肖特基二极管,光电特性表征发现,器件具有自滤光的、可见光盲的近红外窄带响应,中心波长为1010 nm,半峰宽为180 nm,成功验证了硅基肖特基窄带近红外光探测器的设计。研究结果为窄带近红外光探测器等新型光电探测器的设计提供一定的理论支持和实验参考。Narrow-band near-infrared(NIR)photodetectors show a great potential application in biomedicine fields due to its high sensitivity to specific wavelengths,such as clinical diagnosis,treatment equipment or wearable functional monitoring equipment and so on.Based on light absorption characteristics of the bulk Si and the photogenerated carrier collection of the Si-based Schottky junction,a tunable spectral narrow-band NIR photodetector from Si/Gr Schottky diode(SD)was firstly designed by using Silvaco Technology Computer Aided Design(TCAD).Si/Gr SD was constructed by using wet-transferred Gr as Schottky contact electrode based on above-mentioned design.It is found that the resultant Si/Gr SD shows a self-filtered and visible blind NIR narrow band response,with a peak response at around 1010 nm and a half peak width of 180 nm.The design of narrow-band NIR photodetector based on Si Schottky junction is verified successfully.These results pave a way for the design of the novel narrow-band NIR photodetectors.

关 键 词：肖特基结 TCAD仿真 近红外光探测器 窄带 

分 类 号：TN364.1[电子电信—物理电子学]