采用AlGaN组分渐变的底层量子势垒深紫外LED研究  

Research on Deep Ultraviolet LED Based on Underlying Quantum Barrier of AlGaN

作　　者：黄晶 杨辉[1] 杨龙 Huang Jing;Yang Hui;Yang Long(Shangrao Vocational&Technical College,Shangrao 334109,Jiangxi,P.R.China)

机构地区：[1]上饶职业技术学院,江西上饶334109

出　　处：《灯与照明》2021年第4期45-47,共3页Light & Lighting

摘　　要：通过AlGaN基深紫外LED的静电场、光输出功率和内量子效率研究发现,与常规结构深紫外LED相比,该结构具有更高的载流子限制能力。其优越的表现源于深紫外LED以梯度成分AlGaN代替底部量子势垒时,在有源区内部具有低静电场,载流子的注入效率得到提升,从而产生高的光输出性能。AlGaN based deep ultraviolet light emitting diodes with AlGaN bottom quantum barrier composed of Al gradient are studied in this paper. Through the study of the electrostatic field, optical output power and internal quantum efficiency of the structure led, it is found that the structure has higher carrier limiting ability than the conventional deep UV LED. The superior performance stems from the fact that when the deep ultraviolet light emitting diode replaces the bottom quantum barrier with gradient component AlGaN, there is a low electrostatic field in the active region, and the carrier injection efficiency will be improved, resulting in high optical output performance.

关 键 词：底层量子势垒 内量子效率 光输出功率 

分 类 号：TN312.8[电子电信—物理电子学]