基于狭缝结构的异质集成薄膜铌酸锂电光调制器  

Heterogeneous Integrated Thin-film Lithium Niobate Electro-optic Modulator Based on Slot Structure

作　　者：李晓蔚 Li Xiaowei(Jiangnan University,School of IoT Engineering,Wuxi 214122,China)

机构地区：[1]江南大学,江苏无锡214122

出　　处：《科学技术创新》2022年第7期9-12,共4页Scientific and Technological Innovation

基　　金：江苏省自然科学基金(BK20200592);中央高校基础研究成果(JUSRP12024)。

摘　　要：电光调制器(Electro-optic modulator,EOM)在连接电场和光场方面发挥着至关重要的作用。本文中我们提出了一种基于绝缘体上铌酸锂(lithium niobate on insulator,LNOI)平台的异质集成EOM。主要的调制波导结构是通过在薄膜铌酸锂中嵌入硅纳米线形成具有光场增强作用的狭缝波导结构,而不是先前报道的铌酸锂薄膜脊型或无蚀刻型铌酸锂薄膜波导,这种结构可以有助于提高相应EOM的性能。本文所获得的器件性能如下:半波电压与电极长度乘积(VπL)为1.88 V·cm。若将双电容电极与波导结构联用,可进一步将VπL降低至1.35 V·cm。本文所用的场增强型狭缝波导结构和双电容电极结构将进一步促进基于LNOI平台的EOM发展。Electro-optic modulator(EOM)takes a vital role in connecting the electric and optical fields.Here,we propose a heterogeneous integrated EOM based on the lithium niobate-on-insulator(LNOI)platform.The key modulation waveguide structure is formed by embedding silicon nanowire in the thin-film LN to form the field-enhanced slot waveguide,rather than previous reported LN ridge or etchless LN waveguides.Based on such slot structure,optical mode field area is reduced and enhanced electric field in the slot region can be well interacted with LN material with high EO coefficient.From results,the corresponding EOM by adding such modulation waveguide structure achieves better performance,where the key half-wave-voltage-length product(VπL)is 1.88 V·cm.Moreover,Lower VπL can also be achieved to 1.35 V·cm.With these characteristics,such field-enhanced waveguide structure could further promote the development of LNOI-based EOM.

关 键 词：电光调制器 薄膜铌酸锂 狭缝波导结构 光子集成元件 电极结构 

分 类 号：TN761[电子电信—电路与系统]