Optimization of Mo/Cu(In,Ga)Se2/CdS/ZnO Hetero-Junction Solar Cell Performance by Numerical Simulation with SCAPS-1D  

作　　者：Adama Zongo Daouda Oubda Soumaïla Ouédraogo Marcel Bawindsom Kébré Alain Diasso Issiaka Sankara Boureima Traore François Zougmoré Zacharie Koalga Frédéric Ouattara 

机构地区：[1]LA.M.E(Laboratoire de Matériaux et Environnement),UFR-SEA(Unitéde Formation et de Recherche en Sciences Exactes et Appliquées),Ecole Doctorale Sciences et Technologies UniversitéJoseph KI-ZERBO,Ouaga 03 BP 7021,Burkina Faso [2]LA.R.E.M.E(Laboratoire de Recherche en Energétique et Météorologie de l’Espace),Ecole Doctorale Sciences et Technologies,UniversitéNorbert Zongo,Koudougou BP 376,Burkina Faso

出　　处：《材料科学与工程（中英文B版）》2021年第4期156-167,共12页Journal of Materials Science and Engineering B

摘　　要：The paper presents a one-dimensional simulation study of chalcopyrite Cu(In,Ga)Se2(CIGS)solar cells,where the effects of the variation of CIGS,CdS,and ZnO layers are presented.Additionlly the influence of the variation of doping and the defects density of shallow uniform donors and acceptors types are also presented.The analyse of the simulation results shows that recombination inside the space charge region(SCR)decrease more our CIGS solar cell model performance.We also found that the electrical parameters increase with increasing CIGS absorber doping density exception of JSC values that reach their maximum at 1016cm-3 and decrease due to recombination of charge carriers in the p-n junction particularly the recombination inside the SCR.We also stressed the fact that the effects of shallow uniforme donor density is very low on the performance of our CIGS solar cell model is important because it will allow to control the width of space charge region from shallow uniform acceptors defect density that has a strong influence on the different electrical parameters.Yet,good optimization of performance of the CIGS-based solar cell necessarily passes though a good control of the space charge region width and will constitute a boosting perspective for the preparation of our next paper.We contact that the results obtained of the numerical simulation with SCAPS-1D show a good agreement comparatively of the literature results.The simulation of our CIGS solar cell presents best performances if the values of the absorber layer thickness is in the range of 0.02 to 0.03μm,the buffer layer thickness is in the range of 0.02 to 0.06μm and the defects density of shallow uniform acceptors types is in the range of 1015 to 1017cm-3.

关 键 词：Numerical simulation SCAPS-1D CIGS solar cell shallow uniform donors and acceptors defect density 

分 类 号：TM9[电气工程—电力电子与电力传动]