铜锌锡硫硒太阳能电池Mo/CZTSSe界面调控研究进展  

Research progress of Mo/CZTSSe interface regulation in Cu_(2)ZnSn(S_(x),Se_(1-x))_(4) solar cells

作　　者：崔宇博 赵超亮 张志[1] 张梦云 徐艳苹 范丽波 郑直[2] CUI Yubo;ZHAO Chaoliang;ZHANG Zhi;ZHANG Mengyun;XU Yanping;FAN Libo;ZHENG Zhi(School of Materials Science and Engineering,Henan Polytechnic University,Jiaozuo 454000,Henan,China;Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province,Institute of Surface Micro and Nano Materials,College of Chemical and Materials Engineering,Xuchang University,Xuchang 461000,Henan,China)

机构地区：[1]河南理工大学材料科学与工程学院,河南焦作454000 [2]许昌学院化工与材料学院,表面微纳材料研究所,河南省微纳米能量储存与转换材料重点实验室,河南许昌461000

出　　处：《化学研究》2022年第2期95-102,共8页Chemical Research

基　　金：国家自然科学基金项目(52072327);河南省中原千人(中原学者)计划(202101510004);河南省重点研发与推广专项(科技攻关)项目(212102210467)。

摘　　要：Cu_(2)ZnSn(S_(x),Se_(1-x))_(4)太阳能电池制备过程中Mo基底硒(硫)化反应产生较厚的Mo(S_(x),Se_(1-x))_(2),以及SnS(e)与ZnS(e)的生成与挥发在Mo/CZTSSe界面处产生的孔洞,是限制器件性能提升的重要原因。针对这些问题,总结了Mo(S_(x),Se_(1-x))_(2)和孔洞的生成原因及其对器件性能的影响。此外,还综述了金属氮化物、金属氧化物、金属硫化物等材料作为Mo/CZTSSe界面中间层在抑制Mo(S_(x),Se_(1-x))_(2)和孔洞产生中的作用。最后,展望了该领域未来的研究方向。In the fabrication process of Cu_(2)ZnSn(S_(x),Se_(1-x))_(4) solar cells,thick Mo(S_(x),Se_(1-x))_(2) produced by the reaction of Mo substrate and selenium(sulfur)and the voids induced by the formation and volatilization of SnS(e)and ZnS(e)at the Mo/CZTSSe interface were important factors that limited the device efficiency.To address these issues,the origins of the Mo(S_(x),Se_(1-x))_(2) and voids and their influence on the performance of the devices were summarized.In addition,the role of the Mo/CZTSSe interface layer including metal nitrides,metal oxides,metal sulfides,and other materials to suppress the production of Mo(S_(x),Se_(1-x))_(2) and voids were also discussed.An outlook on the future development of this field is provided.

关 键 词：铜锌锡硫硒 Mo/CZTSSe 界面调控 太阳能电池 

分 类 号：TM914.42[电气工程—电力电子与电力传动]