SiC/Cr扩散偶在高温下的界面固相反应研究  

Study on Solid-State Reaction of SiC/Cr Diffusion Couple at High Temperature

作　　者：牛文彬 何盛金 吴利翔[1] 郭伟明[1] 林华泰 NIU Wenbin;HE Shengjin;WU Lixiang;GUO Weiming;LIN Huatai(School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]广东工业大学机电工程学院,广东广州510006

出　　处：《热加工工艺》2022年第4期55-58,63,共5页Hot Working Technology

基　　金：广东省引进创新科研团队计划项目(2013G061)。

摘　　要：基于反应热力学、显微结构和能谱分析,对SiC/Cr扩散偶在高温(1400〜1600℃)环境下的界面固相反应进行研究。结果表明,在1400℃热处理时,只发生Si和C元素向金属Cr侧扩散,扩散层厚度为24.7μm,并且反应层厚度随温度升高而快速增加;当温度达到1600℃时,Cr元素也开始向SiC侧扩散。在扩散初期,金属Cr侧出现Cr_(5)Si_(3)和Cr_(23)C_(6),稳定后,反应物相分布依次为Cr_(5)Si_(3)C_(x)、Cr_(7)C_(3)、Cr_(5)Si_(3)C_(x)。Based on the reaction thermodynamics,the microstructure and energy dispersive spectrometer analysis,the interfacial solid-state reaction of SiC/Cr diffusion couple was studied at high temperature(1400-1600℃).The results show that only Si and C elements diffuse into the the side of Cr metal with a thickness of 24.7μm after heat treatment at 1400℃,and the thickness of the reaction layer increases rapidly with the increase of temperature.When the temperature reaches 1600℃,Cr elements also begin to diffuse to the SiC side.In the initial stage of diffusion,Cr_(5)Si_(3) and Cr_(23)C_(6) appear on the side of Cr metal.After stabilization,the phase distribution of the reactants is Cr_(5)Si_(3)C_(x),Cr_(7)C_(3) and Cr_(5)Si_(3)C_(x) in turn.

关 键 词：反应热力学 显微结构 固相反应 扩散 

分 类 号：TB333.13[一般工业技术—材料科学与工程] TG111.6[金属学及工艺—物理冶金]