Enhanced energy storage performance under low electric field in Sm^(3+) doped AgNbO_(3) ceramics  

作　　者：Jing Li Li Jin Ye Tian Chao Chen Yu Lan Qingyuan Hu Chao Li Xiaoyong Wei Haixue Yan 

机构地区：[1]Electronic Materials Research Laboratory,Key Laboratory of the Ministry of Education&International Center for Dielectric Research,School of Electronic Science and Engineering,Faculty of Electronic and Information Engineering,Xi'an Jiaotong University,Xi'an,710049,China [2]School of Materials Science and Engineering,Shaanxi University of Science&Technology,Xi'an,710021,China [3]Instrument Analysis Center,Xi'an Jiaotong University,China [4]School of Engineering and Materials Science,Queen Mary University of London,Mile End Road,London,E14NS,UK [5]Materials Research Institute,Queen Mary University of London,Mile End Road,London,E14NS,UK

出　　处：《Journal of Materiomics》2022年第2期266-273,共8页无机材料学学报（英文）

基　　金：This work was supported by the National Nature Science Foundation of China(Grant Nos.51772239,51972262 and 51761145024);the Postdoctoral Science Foundation of China(Grant No.2019M653604);the Fundamental Research Funds for the Cen-tral Universities,and“111”Project(No.B14040);the financial support from Shaanxi province(2017ktpt-21).

摘　　要：Herein,Ag_(1-3x)Sm_(x)NbO_(3)(0≤x≤0.025)antiferroelectric ceramics were successfully synthesized by solid state methods.The effect of Sm 3þdoping on the structure,property and energy storage performance were studied.With the increasing Sm^(3+)concentrations,the average grain size decreased.Meanwhile,the stability of high temperature M phases(i.e.,the structure between T_(f) and T_(3))was expanded,which led to low loss for energy storage.Both of structure analysis and ferroelectric tests revealed the existence of weakly polar/AFE-like phase below T_(f).The Sm 3þdoping tended to suppress the ferroelectric behavior and expand the stability of antiferroelectricity.Consequently,a significantly enhanced energy storage performance(W_(rec)=3.8 J/cm^(3),η=73%)could be achieved in Ag_(0.97)Sm_(0.01)NbO_(3) ceramic,which was almost 1.5 times larger than that in non-doped AgNbO_(3)(W_(rec)=2.4 J/cm^(3),η=45%)under the similar applied field of 1705 kV/cm±.In particular,the performance of the ceramic showed great temperature stability with variation of±5%from 25℃ to 125℃.These results indicated that the Ag_(0.97)Sm_(0.01)NbO_(3) ceramic could be an ideal lead-free candidate used in the energy storage field.

关 键 词：Energy storage LEAD-FREE ANTIFERROELECTRICITY FERROELECTRIC 

分 类 号：TQ174.1[化学工程—陶瓷工业]