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作 者:郑晓华[1] 王纯 沈涛[2] 秦海波 杨芳儿[1] Zheng Xiaohua;Wang Chun;Shen Tao;Qin Haibo;Yang Fanger(Zhejiang University of Technology,Hangzhou 310014,China;Zhejiang University,Hangzhou 310027,China)
机构地区:[1]浙江工业大学,浙江杭州310014 [2]浙江大学,浙江杭州310027
出 处:《稀有金属材料与工程》2022年第2期552-558,共7页Rare Metal Materials and Engineering
基 金:浙江省重点研发计划(2017C01051)。
摘 要:以化学共沉淀法合成的锡酸铋(Bi_(2)Sn_(2)O_(7))为改性组元,采用座滴法研究了Bi_(2)Sn_(2)O_(7)掺杂对Ag/SnO_(2)界面润湿角的影响规律,并利用机械合金化技术结合成型烧结工艺制备了Ag/SnO_(2)(x)-Bi_(2)Sn_(2)O_(7)(y)电接触材料。采用扫描电镜、X射线衍射仪、视频光学接触角测量仪、电阻测试仪、硬度计以及密度计等表征手段对材料的物相结构、电学及力学性能进行了表征。结果表明:所合成的Bi_(2)Sn_(2)O_(7)粉体呈无规则颗粒状,尺寸在1~10μm。Bi_(2)Sn_(2)O_(7)掺杂能明显改善Ag与SnO_(2)之间界面润湿性,并且Bi_(2)Sn_(2)O_(7)质量分数在16.7%时润湿角最小为82°。Ag与SnO_(2)之间的润湿角越小,Ag/SnO_(2)(x)-Bi_(2)Sn_(2)O_(7)(y)电接触材料的电阻率越低,尤其在锡酸铋掺杂质量分数为2%时电阻率达到最低值,为2.28μΩ·cm,致密度和硬度HV0.3达到最大值,分别为96.96%和900 MPa。Using bismuth stannate(Bi_(2)Sn_(2)O_(7))synthesized by chemical coprecipitation as modified component,the effect of Bi_(2)Sn_(2)O_(7)doping on the wetting angle of Ag/SnO_(2)interface was studied by the sessile drop method.The Ag/SnO_(2)(x)-Bi_(2)Sn_(2)O_(7)(y)electrical contact materials were prepared by mechanical alloying technique combined with molding sintering process.The phase structure,electrical and mechanical properties of the materials were characterized by SEM,XRD,OCA,resistance tester,hardness tester and densimeter.The results show that Bi_(2)Sn_(2)O_(7)doping can significantly improve the interfacial wettability between Ag and SnO_(2),and the minimum wetting angle is 82°when the mass fraction of Bi_(2)Sn_(2)O_(7)is 16.7%.The lower resistivity of Ag/SnO_(2)(x)-Bi_(2)Sn_(2)O_(7)(y)electrical contact materials is achieved with a decreased wetting angle between Ag and SnO_(2).Especially when the content of Bi_(2)Sn_(2)O_(7)is 2wt%,the resistivity reaches the lowest value(2.28μΩ·cm),and the relative density(96.96%)and hardness HV0.3(900 MPa)reach the maximum value.
关 键 词:Ag/SnO_(2) Bi_(2)Sn_(2)O_(7)掺杂 电接触材料 润湿性 电阻率
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