晶向对摩擦发光影响的实验研究及机理分析  

Experimental study and mechanism analysis on the effect of crystallographic orientation on triboluminescence

作　　者：李娜 徐学锋[1] LI Na;XU Xuefeng(School of Technology,Beijing Forestry University,Beijing 100083,China)

机构地区：[1]北京林业大学工学院,北京100083

出　　处：《清华大学学报（自然科学版）》2022年第3期470-475,共6页Journal of Tsinghua University(Science and Technology)

基　　金：国家自然科学基金资助项目(51575054,51527901)。

摘　　要：由于摩擦发光在人们生产生活的诸多领域都有着广泛的应用前景,国内外学者对这一现象进行了大量的研究。但迄今为止,摩擦发光机理仍未十分清楚。为进一步探索摩擦发光机理,促进摩擦发光的应用,该文利用自行研制的摩擦发光探测装置,实验研究了SiO;晶体不同晶向的摩擦发光特性,实验结果表明晶向对摩擦发光有显著影响。通过测量摩擦发光光谱,发现摩擦发光来自于摩擦起电引起的气体放电,并进而利用功函数的差异解释了不同晶向摩擦发光强度的不同。Triboluminescence has been investigated by many researchers due to its many applications in various fields related to industry and life. However, the triboluminescence mechanism is still unclear. The triboluminescence mechanisms are further investigated here by experimentally studying the triboluminescence properties of SiO;crystals with various crystal orientations. The experimental results show that the crystal orientation significantly affects the triboluminescence. Measurements of the triboluminescence spectra showed that the triboluminescence comes from the gas discharge caused by triboelectrification. The different triboluminescence intensities in different crystal orientations are then shown to be based on the differences in the work functions for different orientations.

关 键 词：摩擦发光 晶向 光强 光谱 

分 类 号：TH117.1[机械工程—机械设计及理论]