Fast-response,high-stability,and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer  

具有电荷存储层的快速响应、高稳定、高效率全彩量子点发光二极管

作　　者：Yangbin Zhu Yang Liu Hailong Hu Zhongwei Xu Jieyu Bai Kaiyu Yang Tailiang Guo Fushan Li 朱阳斌;刘洋;胡海龙;徐中炜;白洁玉;杨开宇;郭太良;李福山(Institute of Optoelectronic Technology,Fuzhou University,Fuzhou,350116,China;Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou,350116,China)

机构地区：[1]Institute of Optoelectronic Technology,Fuzhou University,Fuzhou,350116,China [2]Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou,350116,China

出　　处：《Science China Materials》2022年第4期1012-1019,共8页中国科学（材料科学（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(62075043);Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ126)。

摘　　要：Recently,solution-processed quantum dot lightemitting diodes(QLEDs)have emerged as a promising candidate for next-generation lighting and display devices.However,when given a constant voltage or current,the QLEDs need a certain working time to reach their maximum brightness.Such positive aging challenge,dramatically reducing the response speed of the device and causing a luminescence delay,is urgent to be investigated and resolved.In the current work,we introduce a charge-storage layer architecture by inserting copper(I)thiocyanate(CuSCN)between the organic holeinjection layer and hole-transport layer.The extracted holes will be released during the next electrical signal stimulation to increase the efficiency of charge transport.As a result,the response speed of the QLEDs is improved by an order of magnitude.In addition,by inserting an inorganic CuSCN layer,the efficiency,lifetime,and environmental stability of red/green/blue full-color QLEDs are enhanced simultaneously.Moreover,this work provides a generic strategy for the fabrication of fast-response and high-efficiency full-color QLEDs without luminescence delay,which plays a critical role in the practical industrialization of QLEDs.溶液法处理的量子点发光二极管(QLEDs)已经成为下一代照明和显示器件有希望的候选者.然而,QLEDs的正向老化问题会极大地降低器件的响应速度并导致发光延迟,严重限制了QLEDs器件在高动态显示领域的应用.本文中,我们在有机空穴注入层和空穴传输层之间引入电荷存储层硫氰酸亚铜(CuSCN),存储的空穴将在下一次电信号刺激期间释放以提高电荷传输效率,从而使QLEDs器件的响应速度提高一个数量级.此外,通过插入无机CuSCN层,红/绿/蓝全彩QLEDs器件的效率、寿命和环境稳定性同时得到了提升.这项工作为制造快速响应和高性能的全彩QLEDs提供了一种通用策略.

关 键 词：quantum dot response speed luminescence delay charge storage layer 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN312.8[电子电信—物理电子学]