机构地区:[1]Shenzhen Geim Graphene Center,Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research,Tsinghua Shenzhen International Graduate School,Tsinghua University,Shenzhen,518055,China [2]Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China [3]Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China [4]Guangdong Provincial Key Laboratory of Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,518055,China [5]Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,518055,China
出 处:《Science China Materials》2022年第4期1034-1041,共8页中国科学(材料科学(英文版)
基 金:supported by the National Natural Science Foundation of China(51920105002,51991340,51991343,11974156);the National Key R&D Program of China(2018YFA0307200);Guangdong International Science Collaboration Project(2019A050510001);the Bureau of Industry and Information Technology of Shenzhen for the"2017 Graphene Manufacturing Innovation Center Project"(201901171523);Shenzhen Basic Research Project(WDZC20200819095319002,JC YJ20190809180605522,JCYJ20200109144620815,JCYJ20200109144616617);Shenzhen Science and Technology Program(KQTD20190929173815000);the Science,Technology and Innovation Commission of Shenzhen Municipality(ZDSYS20190902092905285);the assistance of SUSTech Core Research Facilities,especially technical support from Pico-Centre that receives support from Presidential fund and Development and Reform Commission of Shenzhen Municipality;supported by the fund of the Guangdong Provincial Key Laboratory of Computational Science and Material Design(2019B030301001);the Introduced Innovative R&D Team of Guangdong(2017ZT07C062,2019ZT08C044);supported by the Center for Computational Science and Engineering of Southern University of Science and Technology。
摘 要:Atomically thin transition metal dichalcogenides(TMDCs)are intriguing semiconductors for photonics and optoelectronics,and therefore enhancing their photoluminescence(PL)efficiency is crucial for these applications.Many efforts have been contributed to enhancing the PL performance of monolayer TMDCs,yet the complexity between the microstructure and the PL efficiency has hindered the manipulation of their PL properties.Here we demonstrate that the PL intensity of the monolayer TMDC can be enhanced by nearly one order of magnitude with a~20%narrower spectral linewidth after a pre-activation plateau using laser irradiation in ambient environment.Combined experimental and theoretical studies reveal that low-power laser irradiation generates many sulfur vacancy clusters,which are subsequently filled up by oxygen,and the lattice substitutional oxygen clusters induce the dramatic PL enhancement of monolayer WS;.Such PL enhancement phenomenon is found to be universal for other monolayer TMDCs,and thus would benefit their versatile optical applications.具有原子层厚度的过渡金属硫族化合物(TMDCs)是一种适用于光子和光电子领域的新颖的半导体材料,而增强其光致发光(PL)特性对于这类材料的光学应用至关重要.尽管研究人员做了大量的工作来增强单层TMDCs的PL特性,但微观结构和PL效率之间的复杂关系阻碍了对其性质的调控.本文中,我们证实了在激光辐照下,单层TMDC的PL强度在经过一个预激活的平台后可以增强近一个数量级且半峰宽变窄约20%.实验和理论研究表明,低功率的激光辐照能够在WS_(2)中产生许多硫空位簇,这些硫空位簇随后被氧取代并显著增强其PL.这种PL增强的现象在其他单层TMDC材料中有普适性,有利于TMDC在光学领域的应用.
关 键 词:two-dimensional materials transition metal dichalcogenides photoluminescence enhancement LASER OXYGEN
分 类 号:TB34[一般工业技术—材料科学与工程]
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