Tuning photoresponse of graphene-black phosphorus heterostructure by electrostatic gating and photo-induced doping  

作　　者：Yanpeng Liu Ming Yang Junpeng Lu Ying Liu Hongwei Liu Erwen Zhang Wei Fu Junyong Wang Zhenliang Hu Jun Yin Goki Eda Shijie Wang Jiabao Yi Ajayan Vinu Kian Ping Loh 

机构地区：[1]Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education,State Key Laboratory of Mechanics and Control of Mechanical Structures,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China [2]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China [3]School of Physics,Southeast University,Nanjing 211189,China [4]College of Jincheng,Nanjing University of Aeronautics and Astronautics,Nanjing 211156,China [5]School of Physics and Technology,Nanjing Normal University,Nanjing 210023,China [6]Department of Chemistry,National University of Singapore,Singapore 117543,Singapore [7]Institute of Materials Research and Engineering,Agency for Science,Technology and Research(A*STAR),Innovis 138634,Singapore [8]Global Innovative Centre for Advanced Nanomaterials,College of Engineering,Science and Environment,The University of Newcastle,Newcastle NSW 2308,Australia

出　　处：《Chinese Chemical Letters》2022年第1期368-373,共6页中国化学快报（英文版）

基　　金：the financial support provided by the Fundamental Research Funds for the Central Universities(Nos.NS2020008,NC2018001,NJ2020003,NZ2020001);the Program for Innovative Talents and Entrepreneur in Jiangsu,Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures(Nos.MCMS-I-0419G02,MCMS-I-0421K01);National Key Research and Development Program of China(No.2019YFA0705400);Australian Research Council Future Fellowship(No.FT160100205);DECRA Fellowship(No.DE200101622)。

摘　　要：Metal-semiconductor diodes constructed from two-dimensional(2D)van der Waals heterostructures show excellent gate electrostatics and a large built-in electric field at the tunnel junction,which can be exploited to make highly sensitive photodetector.Here we demonstrate a metal-semiconductor photodiode constructed by the monolayer graphene(Gr)on a few-layer black phosphorus(BP).Due to the presence of a built-in potential barrier(~0.09±0.03 eV)at the Gr-BP interface,the photoresponsivity of the Gr-BP device is enhanced by a factor of 672%,and the external quantum efficiency(EQE)increases to648%from 84%of the bare BP.Electrostatic gating allows the BP channel to be switched between p-type and n-type conduction.We further demonstrate that excitation laser power can be used to control the current polarity of the Gr-BP device due to photon-induced doping.The versatility of the Gr-BP junctions in terms of electrostatic bias-induced or light-induced switching of current polarity is potentially useful for making dynamically reconfigurable digital circuits.

关 键 词：Black phosphorous GRAPHENE HETEROSTRUCTURE Gate-tunable PHOTODETECTOR Photoinverter 

分 类 号：TN15[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]