分层溅射法制备晶向可控的Mg_(2)Si薄膜  

Orientation-controlled Mg_(2)Si Films Fabricated by Layered Sputtering

作　　者：廖杨芳[1] 谢泉 LIAO Yangfang;XIE Quan(College of Physics and Electronic Sciences,Guizhou Normal University,Guiyang,550001,CHN;College of Big Data and Information Engineering,Guizhou University,Guiyang,550025,CHN)

机构地区：[1]贵州师范大学物理与电子科学学院,贵阳550001 [2]贵州大学大数据与信息工程学院,贵阳550025

出　　处：《固体电子学研究与进展》2022年第1期38-43,共6页Research & Progress of SSE

基　　金：贵州省科技计划项目(黔科合基础[2019]1225号);贵州师范大学资助博士科研项目(GZNUD[2018]15号)。

摘　　要：采用分层溅射法在石英衬底上制备了结晶良好的Mg_(2)Si多晶薄膜。当Si膜的溅射时间均为25 min、Mg膜的溅射时间为18~22 min、退火温度为375℃时,随着膜厚增加,Mg_(2)Si薄膜的织构由(311)向(220)转变;退火温度为400℃时,薄膜的最强衍射峰均为Mg_(2)Si(220)。所有样品均在256 cm^(-1)附近出现了较强的拉曼散射特征峰,在347 cm^(-1)附近出现了较弱的拉曼散射特征峰,这两个峰分别属于Mg_(2)Si的F_(2g)和F_(1u)(LO)声子模。在石英衬底上,改变溅射条件和退火温度,可实现Mg_(2)Si薄膜的晶向可控制备。Mg_(2)Si polycrystalline films with good crystallization were prepared by layered sputtering on a quartz substrate. When the sputtering time of Si film is 25 min,the sputtering time of Mg film is 18~22 min,and the annealing temperature is 375 ℃,the texture of Mg_(2)Si film changes from(311)to(220)with the increase of film thickness. When annealing temperature is 400 ℃,the maximum diffraction peak of the films is Mg_(2)Si(220). The strong Raman scattering peak near wave number 256 cm^(-1) and a weaker one near 347 cm^(-1) appear in all samples,which belong to the F_(2g) and F_(1u)(LO)phonon modes of Mg_(2)Si respectively. The crystal orientation of Mg_(2)Si thin films on quartz substrate can be controlled by changing the sputtering condition and annealing temperature.

关 键 词：Mg_(2)Si 薄膜 分层溅射 晶向可控 石英衬底 

分 类 号：O484.5[理学—固体物理]