Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector  

混合1D/2D异质结构耦合电子结构工程用于高灵敏度和偏振依赖的光电探测器

作　　者：Yuchen Zhou Lixiang Han Qiqi Song Wei Gao Mengmeng Yang Zhaoqiang Zheng Le Huang Jiandong Yao Jingbo Li 周瑜琛;韩理想;宋琦琦;高伟;杨孟孟;郑照强;黄乐;姚健东;李京波(Guangdong Provincial Key Laboratory of Information Photonics Technology,School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China;Institute of Semiconductors,South China Normal University,Guangzhou 510631,China;State Key Laboratory of Optoelectronic Materials and Technologies,Nanotechnology Research Center,School of Materials Science&Engineering,Sun Yatsen University,Guangzhou 510275,China;Guangdong Provincial Key Laboratory of Chip and Integration Technology,Guangzhou 510631,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]Guangdong Provincial Key Laboratory of Information Photonics Technology,School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China [2]Institute of Semiconductors,South China Normal University,Guangzhou 510631,China [3]State Key Laboratory of Optoelectronic Materials and Technologies,Nanotechnology Research Center,School of Materials Science&Engineering,Sun Yatsen University,Guangzhou 510275,China [4]Guangdong Provincial Key Laboratory of Chip and Integration Technology,Guangzhou 510631,China [5]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Science China Materials》2022年第3期732-740,共9页中国科学（材料科学（英文版）

基　　金：supported by the National Natural Science Foundation of China(61805044,62004071 and 11674310);the Key Platforms and Research Projects of Department of Education of Guangdong Province(2018KTSCX050);Guangdong Provincial Key Laboratory of Information Photonics Technology(2020B121201011);"The Pearl River Talent Recruitment Program"(2019ZT08X639)。

摘　　要：The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection.In this field,the two-dimensional(2D)tungsten disulfide(WS_(2))exhibits intriguing optical and electronic properties,making it an attractive photosensitive material for optoelectronic applications.However,the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS_(2)impedes its application in high-performance photodetectors.Herein,we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS_(2).In this device,1D Te induces in-plane strain in 2D WS_(2),which regulates the electronic structures of local WS_(2)and gives rise to type-Ⅱ band alignment in the horizontal direction.Moreover,the vertical heterojunction built of 2D WS_(2)and 1D Te introduces a high photoconductive gain.Benefiting from these two effects,the transfer of photogenerated carriers is optimized,and the proposed photodetector exhibits high sensitivity(photoresponsivity of ~27.7 A W^(-1),detectivity of 9.5×10^(12)Jones,and short rise/decay time of 19.3/17.6 ms).In addition,anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved.This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties,opening up a new avenue towards constructing multifunctional optoelectronic devices.随着光电探测器的广泛应用,人们迫切需要高灵敏度、偏振依赖的光电探测技术.在这一领域,二维二硫化钨(2D WS_(2))表现出出色的光学和电子特性,使其成为一种在光电应用领域有吸引力的光敏材料.但是,2D WS_(2)缺乏有效的内建电场和光电导增益机制,阻碍了其在高性能光电探测器中的应用.在此,我们提出了一种包含1D Te和2D WS_(2)的混合异质结构光电探测器.在该器件中,二维WS_(2)在1D Te上产生平面内形态应变,该应变能调节WS_(2)的局部电子结构,并在水平方向上形成II型能带排列.此外,2D WS_(2)和1D Te的垂直异质结引入了光电导增益.这两种效应优化了光致载流子的转移,使得光电探测器具有较高的灵敏度(光响应度为~27.7 A W^(-1),探测度为9.5×10^(12)Jones,上升/衰减时间为19.3/17.6 ms).此外,该器件还获得了各向异性的光电探测特性,其二向色比可达2.1.这种混合的1D/2D异质结构克服了单种材料固有的局限性,实现了新的性能,为构建多功能光电器件开辟了新的途径.

关 键 词：hybrid heterostructure electronic structure engineering PHOTODETECTOR anisotropic photodetection 

分 类 号：TN15[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]