Threshold voltage modulation in monolayer MoS_(2) field-effect transistors via selective gallium ion beam irradiation  

通过镓离子束辐照调控单层MoS_(2)晶体管的阈值电压

作　　者：Baoshan Tang Yunshan Zhao Changjie Zhou Mingkun Zhang Huili Zhu Yida Li Jin Feng Leong Hao Shuai Hao Gong Weifeng Yang 唐保山;赵云山;周昌杰;张明昆;朱会丽;李毅达;梁锦锋;帅浩;龚浩;杨伟锋(Department of Microelectronics and Integrated Circuit,School of Electronic Science and Engineering,Xiamen University,Xiamen 361005,China;Department of Electrical and Computer Engineering,National University of Singapore,Singapore 117576,Singapore;NNU-SULI Thermal Energy Research Center(NSTER)&Center for Quantum Transport and Thermal Energy Science(CQTES),School of Physics and Technology,Nanjing Normal University,Nanjing 210023,China;Department of Physics,School of Science,Jimei University,Xiamen 361021,China;Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Southern University of Science and Technology,Shenzhen 518055,China;Department of Materials Science and Engineering,National University of Singapore,Singapore 117575,Singapore)

机构地区：[1]Department of Microelectronics and Integrated Circuit,School of Electronic Science and Engineering,Xiamen University,Xiamen 361005,China [2]Department of Electrical and Computer Engineering,National University of Singapore,Singapore 117576,Singapore [3]NNU-SULI Thermal Energy Research Center(NSTER)&Center for Quantum Transport and Thermal Energy Science(CQTES),School of Physics and Technology,Nanjing Normal University,Nanjing 210023,China [4]Department of Physics,School of Science,Jimei University,Xiamen 361021,China [5]Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Southern University of Science and Technology,Shenzhen 518055,China [6]Department of Materials Science and Engineering,National University of Singapore,Singapore 117575,Singapore

出　　处：《Science China Materials》2022年第3期741-747,共7页中国科学（材料科学（英文版）

基　　金：supported by Fujian Minjiang Distinguished Scholar Program;the Department of Science and Technology of Fujian Province(2020J01704 and 2019L3008);the Scientific Research Foundation from Jimei University(ZP2020066 and ZP2020065)。

摘　　要：Electronic regulation of two-dimensional(2 D)transition metal dichalcogenides(TMDCs)is a crucial step towards next-generation optoelectronics and electronics.Here,we demonstrate controllable and selective-area defect engineering in 2D molybdenum disulfide(MoS_(2))using a focused ion beam with a low-energy gallium ion(Ga^(+))source.We find that the surface defects of MoS_(2)can be tuned by the precise control of ion energy and dose.Furthermore,the fieldeffect transistors based on the monolayer MoS_(2)show a significant threshold voltage modulation over 70 V after Ga+irradiation.First-principles calculations reveal that the Ga impurities in the monolayer MoS_(2)introduce a defect state near the Fermi level,leading to a shallow acceptor level of 0.25 eV above the valence band maximum.This defect engineering strategy enables direct writing of complex pattern at the atomic length scale in a controlled and facile manner,tailoring the electronic properties of 2D TMDCs for novel devices.对原子层厚度二维(2D)过渡金属硫化物(TMDCs)电子属性的调控是实现其新型光电和电子器件应用的关键.本文采用聚焦低能量镓离子束辐照超薄二硫化钼,通过缺陷工程实现了原子层级的位点缺陷调控.研究发现二硫化钼表面缺陷可以通过精确控制镓离子束的能量和剂量来实现低损伤的镓掺杂.此外,在镓离子注入后,单层二硫化钼晶体管的阈值电压实现了超过70 V的迁移.第一性原理计算证实镓杂质离子在单层二硫化钼的费米能级附近引入一个位于价带顶0.25 eV的浅缺陷能级.这种可控和便捷的缺陷工程方法实现了原子层深度的复杂图样区域性掺杂,进而调控超薄二维半导体的电学性能,为实现高性能的新一代光电和电子器件奠定了基础.

关 键 词：two-dimensional transition metal dichalcogenides field-effect transistors defect engineering Ga ion irradiation 

分 类 号：TN32[电子电信—物理电子学]