SnO_(2)缓冲层对VO_(2)薄膜微观结构与相变性能的影响  

Effect of SnO_(2)Buffer Layer on Microstructure and Phase Transformation Properties of VO_(2) Thin Films

作　　者：马紫腾 刘哲 莫敏静 郭佳成 刘雍[1] 魏长伟 何春清[1] MA Ziteng;LIU Zhe;MO Minjing;GUO Jiacheng;LIU Yong;WEI Changwei;HE Chunqing(Key Lab.of Nuclear Soild State Physics,School of Physics and Technology,Wuhan University,Wuhan 430072,CHN;Wuhan Chamtop New Materials Co,Ltd.,Wuhan 430000,CHN)

机构地区：[1]武汉大学物理科学与技术学院湖北省核固体物理重点实验室,武汉430072 [2]武汉长弢新材料有限公司,武汉430000

出　　处：《半导体光电》2022年第1期132-136,共5页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2019YFA0210003);国家自然科学基金项目(12075172,12074291,11875209)。

摘　　要：利用电子束蒸发法在Si衬底上制备了不同厚度的SnO_(2)缓冲层,并使用磁控溅射法制备出上层氧化钒薄膜,研究了SnO_(2)缓冲层厚度对于氧化钒薄膜微观结构、相组成以及相变性能的影响。结果表明,引入具有四方金红石结构的SnO_(2)缓冲层后,上层氧化钒薄膜的结晶性变好,随着SnO_(2)缓冲层厚度的增加,沉积的氧化钒薄膜中V^(4+)含量逐渐提高,氧化钒薄膜的平均晶粒尺寸增大,成膜质量变好;相变锐度有所降低,热滞回线宽度减小。这些结果表示SnO_(2)缓冲层的引入有利于在硅衬底上生长高质量且相变性能优越的VO_(2)薄膜。SnO_(2)buffer layers with different thicknesses were prepared on silicon substrate by electron beam evaporation,and their influence on the microstructure,phase composition and phase transformation properties of the upper vanadium oxide films deposited by magnetron sputtering were investigated.Experimental results show that the lattice of tetragonal-rutile structure SnO_(2)matches well with that of vanadium oxide films,leading to the thin films contains more V^(4+).When the thickness of SnO_(2)buffer layer increases,accompanied by the appearance of more homogeneous sizes of SnO_(2)crystallite,larger grain sizes,narrower thermal hysteresis loops and sharper phase transition can be observed for the deposited VO_(2)films.Accordingly,this work indicates that the addition of SnO_(2)buffer layer with optimal thickness is beneficial to the growth of high-quality VO_(2)films with excellent phase transition performance.

关 键 词：缓冲层 氧化钒 金属-绝缘体相变 二氧化锡 

分 类 号：TN383.2[电子电信—物理电子学]