Interband cascade lasers with short electron injector  

作　　者：Chao Ning Tian Yu Shuman Liu Jinchuan Zhang Lijun Wang Junqi Liu Ning Zhuo Shenqiang Zhai Yuan Li Fengqi Liu 宁超;于天;刘舒曼;张锦川;王利军;刘俊岐;卓宁;翟慎强;李远;刘峰奇(Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Opto-Electronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China)

机构地区：[1]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Opto-Electronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Beijing Academy of Quantum Information Sciences,Beijing 100193,China

出　　处：《Chinese Optics Letters》2022年第2期142-147,共6页中国光学快报（英文版）

基　　金：This work was supported by the National Key Research and Development Project(No.2018YFB2200500);the National Natural Science Foundation of China(Nos.61790583 and 61774150)。

摘　　要：We demonstrate Ga Sb-based interband cascade lasers(ICLs) emitting around 3.65 μm, which exhibit a room-temperature continuous-wave(CW) output power above 100 m W. Cavity-length analysis showed that the laser structure has a low internal loss of 3 cm^(-1) while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25°C,the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device.

关 键 词：interband cascade lasers quantum well MID-INFRARED semiconductor lasers 

分 类 号：TN248[电子电信—物理电子学]