InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range  

作　　者：Yu Li Weifang Yuan Ke Li Xiaofeng Duan Kai Liu Yongqing Huang 李玉;袁纬方;李珂;段晓峰;刘凯;黄永清(State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China)

机构地区：[1]State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China

出　　处：《Chinese Optics Letters》2022年第2期153-159,共7页中国光学快报（英文版）

基　　金：This work was supported by the National Key Research and Development Program of China(No.2018YFB2200803)。

摘　　要：Linearity is a very important parameter to measure the performance of avalanche photodiodes(APDs) under high input optical power. In this paper, the influence of the absorption layer on the linearity of APDs is carefully studied by using bandgap engineering with the structure model of separated absorption, grading, charge, multiplication, charge, and transit(SAGCMCT). The simulated results show that in the hybrid absorption layer device structure the 1 d B compression point can be improved from-9 d Bm to-2.1 d Bm by increasing the proportion of the p-type absorption layer. In the device structure with only one absorption layer, increasing the doping level of the absorption layer can also improve the 1 d B compression point from-8.6 d Bm to 1.43 d Bm at a gain of 10. Therefore, the absorption layer is very critical for the linearity of APDs.

关 键 词：LINEARITY avalanche photodiode dynamic range 

分 类 号：TN312.7[电子电信—物理电子学]