氧化物反铁磁Cr_(2)O_(3)薄膜的研究进展  

Research progress of oxide antiferromagnetic Cr_(2)O_(3) thin film

作　　者：马秀梅[1] MA Xiumei(Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China)

机构地区：[1]北京大学物理学院电子显微镜实验室,北京100871

出　　处：《功能材料》2022年第3期3020-3025,共6页Journal of Functional Materials

基　　金：国家自然科学基金青年科学基金项目(51802006)。

摘　　要：氧化物反铁磁Cr_(2)O_(3)薄膜在自旋电子学器件中有着广泛的应用。重点论述了反铁磁Cr_(2)O_(3)的早期基础性研究,以及反铁磁Cr_(2)O_(3)薄膜在交换偏置和磁电效应方面的研究进展。最后指出了氧化物反铁磁Cr_(2)O_(3)薄膜研究中存在的部分问题,并展望了它的发展前景。Oxide antiferromagnetic Cr_(2)O_(3) thin films have extensive applications in spintronic devices.The early basic research on antiferromagnetic Cr_(2)O_(3),as well as the research progress of antiferromagnetic Cr_(2)O_(3) thin film in exchange bias and magnetoelectric effect is reviewed in this article.Finally,part of the problems presented in the study of oxide antiferromagnetic Cr_(2)O_(3) thin films are pointed out,and the future development are also prospected.

关 键 词：反铁磁 Cr_(2)O_(3)薄膜 交换偏置 磁电效应 研究进展 

分 类 号：TB34[一般工业技术—材料科学与工程] TM271[电气工程—电工理论与新技术]