Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon  

作　　者：Xiao-Ke Lei Bin-Cheng Li Qi-Ming Sun Jing Wang Chun-Ming Gao Ya-Fei Wang 雷晓轲;李斌成;孙启明;王静;高椿明;王亚非(School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China

出　　处：《Chinese Physics B》2022年第3期575-580,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 61771103, 61704023, and 61601092)。

摘　　要：The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.

关 键 词：ultra-low energy ion implantation differential nonlinear photocarrier radiometry junction depth electronic transport parameters 

分 类 号：TN386[电子电信—物理电子学] TQ127.2[化学工程—无机化工]